页 343 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
QRS1440T30	Powerex Inc.	DIODE MODULE 1.4KV 249A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 249A Voltage - Forward (Vf) (Max) @ If: 3.8V @ 400A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 2mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -	封装: Module	库存4,816	1400V	249A	3.8V @ 400A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	2mA @ 1400V	-	Chassis Mount	Module	Module	-
1N5406	ON Semiconductor	DIODE GEN PURP 600V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 170°C	封装: DO-201AA, DO-27, Axial	库存633,540	600V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 170°C
STPS3150	STMicroelectronics	DIODE SCHOTTKY 150V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 820mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 175°C (Max)	封装: DO-201AD, Axial	库存156,000	150V	3A	820mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	175°C (Max)
D121K20B	Infineon Technologies Industrial Power and Controls Americas	RECTIFIER DIODE 2000V 360A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存6,496	-	-	-	-	-	-	-	-	-	-	-
MBR2045EMFST3G	ON Semiconductor	DIODE SCHOTTKY 45V 20A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 640mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C	封装: 8-PowerTDFN, 5 Leads	库存4,288	45V	20A	640mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 45V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 150°C
UG4B-M3/73	Vishay Semiconductor Diodes Division	DIODE 4A 100V 20NS DO-201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存5,584	100V	4A	950mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS1P4L-M3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 40V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-220AA	库存6,944	40V	1A	480mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 40V	130pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
GSD2004W-HE3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 240V 225MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 240V Current - Average Rectified (Io): 225mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 240V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max)	封装: SOD-123	库存2,384	240V	225mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 240V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)
MBR6060PT C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 60A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 930mV @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-247-3	库存7,424	60V	60A	930mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
STTH30R04G-TR	STMicroelectronics	DIODE GEN PURP 400V 30A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 15µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存7,648	400V	30A	1.45V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	15µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-40°C ~ 175°C
SBRT3U40P1-7	Diodes Incorporated	DIODE SBR 40V 3A POWERDI123 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 180µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -65°C ~ 150°C	封装: POWERDI?123	库存39,000	40V	3A	490mV @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	180µA @ 40V	-	Surface Mount	POWERDI?123	PowerDI? 123	-65°C ~ 150°C
SK36-TP	Micro Commercial Co	DIODE SCHOTTKY 60V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存648,000	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	250pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
MBR15200S	SMC Diode Solutions	DIODE SCHOTTKY 200V 15A TO277B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 200 V Capacitance @ Vr, F: 400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277B Operating Temperature - Junction: -55°C ~ 200°C	封装: -	库存169,551	200 V	15A	920 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 200 V	400pF @ 5V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 200°C
UTR419-TR	Microchip Technology	DIODE GEN PURP 400V 9A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	400 V	9A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
SE8D20GHM3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 2A SLIMSMAW Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存43,800	400 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	5 µA @ 400 V	12pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-55°C ~ 175°C
MBR3200_R2_00001	Panjit International Inc.	DIODE SCHOTTKY 200V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	200 V	3A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
JAN1N6626US-TR	Microchip Technology	DIODE GEN PURP 220V 1.75A D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 220 V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1.2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 2 µA @ 220 V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	220 V	1.75A	1.35 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 220 V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
EGL34AHE3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 50V 500MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	50 V	500mA	1.25 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 50 V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
HER203G-AP	Micro Commercial Co	DIODE GEN PURP 200V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	50pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
RHRP30120-F102	onsemi	DIODE GEN PURP 1.2KV 30A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85 ns Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	1200 V	30A	3.2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 1200 V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
W2340JK120	IXYS	DIODE GEN PURP 1.2KV 2340A W113 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 2340A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: W113 Operating Temperature - Junction: -	封装: -	Request a Quote	1200 V	2340A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Clamp On	DO-200AB, B-PUK	W113	-
UTR41	Microchip Technology	DIODE GEN PURP 400V 1A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350 ns Current - Reverse Leakage @ Vr: 3 µA @ 400 V Capacitance @ Vr, F: 60pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	400 V	1A	1.1 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	3 µA @ 400 V	60pF @ 0V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
FDH333_NL	Fairchild Semiconductor	DIODE GEN PURP 125V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3 nA @ 125 V Capacitance @ Vr, F: 6pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 175°C (Max)	封装: -	Request a Quote	125 V	200mA	1.05 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	3 nA @ 125 V	6pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	175°C (Max)
S4D30120H2	SMC Diode Solutions	1200V, 30A, TO-247AC, SIC SCHOTT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 94A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 1.2 kV Capacitance @ Vr, F: 2581pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存666	1200 V	94A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 1.2 kV	2581pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247AC	-55°C ~ 175°C
SS36C	MDD	DIODE SCHOTTKY 60V 3A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 450pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	60 V	3A	700 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	450pF @ 4V, 1MHz	Surface Mount	-	-	-
LL4005G-L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
SMD15PLHE3-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 50 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	50 V	1A	700 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 50 V	110pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 125°C
JAN1N6773	Microchip Technology	DIODE GEN PURP 600V 8A TO257 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 10 µA @ 480 V Capacitance @ Vr, F: 200pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -	封装: -	Request a Quote	600 V	8A	1.6 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 480 V	200pF @ 5V, 1MHz	Through Hole	TO-257-3	TO-257	-
V2P6XHM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 240pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	60 V	2A	640 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	240pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-40°C ~ 175°C
P2500T	Diotec Semiconductor	IC Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1300 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 1300 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P-600 Operating Temperature - Junction: -50°C ~ 175°C	封装: -	Request a Quote	1300 V	25A	1.1 V @ 25 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1300 V	-	Through Hole	P600, Axial	P-600	-50°C ~ 175°C

QRS1440T30

Powerex Inc.

DIODE MODULE 1.4KV 249A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 249A
Voltage - Forward (Vf) (Max) @ If: 3.8V @ 400A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 2mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Operating Temperature - Junction: -

封装: Module

库存4,816

1400V

249A

3.8V @ 400A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

2mA @ 1400V

-

Chassis Mount

Module

-

1N5406

ON Semiconductor

DIODE GEN PURP 600V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 170°C

封装: DO-201AA, DO-27, Axial

库存633,540

600V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 170°C

STPS3150

STMicroelectronics

DIODE SCHOTTKY 150V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 820mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 175°C (Max)

封装: DO-201AD, Axial

库存156,000

150V

3A

820mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2µA @ 150V

-

Through Hole

DO-201AD, Axial

DO-201AD

175°C (Max)

D121K20B

Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE 2000V 360A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存6,496

-

MBR2045EMFST3G

ON Semiconductor

DIODE SCHOTTKY 45V 20A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 640mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C

封装: 8-PowerTDFN, 5 Leads

库存4,288

45V

20A

640mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 45V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 150°C

UG4B-M3/73

Vishay Semiconductor Diodes Division

DIODE 4A 100V 20NS DO-201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存5,584

100V

4A

950mV @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

15ns

5µA @ 100V

20pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SS1P4L-M3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 40V
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-220AA

库存6,944

40V

1A

480mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 40V

130pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

GSD2004W-HE3-18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 240V 225MA SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 240V
Current - Average Rectified (Io): 225mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 240V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)

封装: SOD-123

库存2,384

240V

225mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 240V

5pF @ 0V, 1MHz

Surface Mount

SOD-123

150°C (Max)

MBR6060PT C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 60A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 930mV @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-247-3

库存7,424

60V

60A

930mV @ 60A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

-

Through Hole

TO-247-3

TO-247AD (TO-3P)

-55°C ~ 150°C

STTH30R04G-TR

STMicroelectronics

DIODE GEN PURP 400V 30A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 15µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存7,648

400V

30A

1.45V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

100ns

15µA @ 400V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-40°C ~ 175°C

SBRT3U40P1-7

Diodes Incorporated

DIODE SBR 40V 3A POWERDI123

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 180µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -65°C ~ 150°C

封装: POWERDI?123

库存39,000

40V

3A

490mV @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

180µA @ 40V

-

Surface Mount

POWERDI?123

PowerDI? 123

-65°C ~ 150°C

SK36-TP

Micro Commercial Co

DIODE SCHOTTKY 60V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存648,000

60V

3A

750mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

250pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

MBR15200S

SMC Diode Solutions

DIODE SCHOTTKY 200V 15A TO277B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277B
Operating Temperature - Junction: -55°C ~ 200°C

封装: -

库存169,551

200 V

15A

920 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 200 V

400pF @ 5V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277B

-55°C ~ 200°C

UTR419-TR

Microchip Technology

DIODE GEN PURP 400V 9A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

400 V

9A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

Through Hole

A, Axial

-65°C ~ 175°C

SE8D20GHM3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 2A SLIMSMAW

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存43,800

400 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

1.2 µs

5 µA @ 400 V

12pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SlimSMAW (DO-221AD)

-55°C ~ 175°C

MBR3200_R2_00001

Panjit International Inc.

DIODE SCHOTTKY 200V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

200 V

3A

900 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 200 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

JAN1N6626US-TR

Microchip Technology

DIODE GEN PURP 220V 1.75A D-5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 220 V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1.2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 2 µA @ 220 V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

220 V

1.75A

1.35 V @ 1.2 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

2 µA @ 220 V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 150°C

EGL34AHE3_A-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 500MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

50 V

500mA

1.25 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 50 V

7pF @ 4V, 1MHz

Surface Mount

DO-213AA (Glass)

DO-213AA (GL34)

-65°C ~ 175°C

HER203G-AP

Micro Commercial Co

DIODE GEN PURP 200V 2A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

200 V

2A

1 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 200 V

50pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

RHRP30120-F102

onsemi

DIODE GEN PURP 1.2KV 30A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

1200 V

30A

3.2 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

85 ns

250 µA @ 1200 V

-

Through Hole

TO-220-2

-65°C ~ 175°C

W2340JK120

IXYS

DIODE GEN PURP 1.2KV 2340A W113

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 2340A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: W113
Operating Temperature - Junction: -

封装: -

Request a Quote

1200 V

2340A

-

Standard Recovery >500ns, > 200mA (Io)

-

Clamp On

DO-200AB, B-PUK

W113

-

UTR41

Microchip Technology

DIODE GEN PURP 400V 1A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

400 V

1A

1.1 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

350 ns

3 µA @ 400 V

60pF @ 0V, 1MHz

Through Hole

A, Axial

-65°C ~ 175°C

FDH333_NL

Fairchild Semiconductor

DIODE GEN PURP 125V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 125 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3 nA @ 125 V
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)

封装: -

Request a Quote

125 V

200mA

1.05 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

3 nA @ 125 V

6pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

175°C (Max)

S4D30120H2

SMC Diode Solutions

1200V, 30A, TO-247AC, SIC SCHOTT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 94A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 1.2 kV
Capacitance @ Vr, F: 2581pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存666

1200 V

94A

1.8 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 µA @ 1.2 kV

2581pF @ 0V, 1MHz

Through Hole

TO-247-2

TO-247AC

-55°C ~ 175°C

SS36C

MDD

DIODE SCHOTTKY 60V 3A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

60 V

3A

700 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

450pF @ 4V, 1MHz

Surface Mount

-

LL4005G-L0

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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600 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

15pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF

MELF

-65°C ~ 150°C

SMD15PLHE3-TP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

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50 V

1A

700 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 50 V

110pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 125°C

JAN1N6773

Microchip Technology

DIODE GEN PURP 600V 8A TO257

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Current - Reverse Leakage @ Vr: 10 µA @ 480 V
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -

封装: -

Request a Quote

600 V

8A

1.6 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

60 ns

10 µA @ 480 V

200pF @ 5V, 1MHz

Through Hole

TO-257-3

TO-257

-

V2P6XHM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 2A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

60 V

2A

640 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

240pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-40°C ~ 175°C

P2500T

Diotec Semiconductor

IC

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1300 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 10 µA @ 1300 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P-600
Operating Temperature - Junction: -50°C ~ 175°C

封装: -

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1300 V

25A

1.1 V @ 25 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

10 µA @ 1300 V

-

Through Hole

P600, Axial

P-600

-50°C ~ 175°C