图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Powerex Inc. |
DIODE GEN PURP 1.2KV 250A DO205
|
封装: DO-205AB, DO-9, Stud |
库存4,512 |
|
1200V | 250A | 2V @ 800A | Standard Recovery >500ns, > 200mA (Io) | 1µs | 50mA @ 1200V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -45°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 10A,
|
封装: TO-220-2 |
库存7,456 |
|
20V | 10A | 550mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
||
Diodes Incorporated |
DIODE SBR 45V 10A DO201AD
|
封装: DO-201AD, Axial |
库存85,200 |
|
45V | 10A | 470mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
||
Microsemi Corporation |
DIODE SCHOTTKY 1A 70V SMAJ
|
封装: - |
库存7,824 |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AA
|
封装: DO-214AA, SMB |
库存3,520 |
|
150V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 50V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
||
TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 4
|
封装: DO-219AB |
库存3,744 |
|
40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 125°C |
||
TSC America Inc. |
DIODE, FAST, 0.8A, 100V, 150NS,
|
封装: DO-219AB |
库存6,288 |
|
100V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
||
SMC Diode Solutions |
DIODE GEN PURP 800V 1A A-405
|
封装: Axial |
库存3,936 |
|
800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | Axial | A-405 | -65°C ~ 175°C |
||
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 400A DO205AB
|
封装: DO-205AB, DO-9, Stud |
库存6,000 |
|
800V | 400A | 1.62V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 800V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -40°C ~ 200°C |
||
Vishay Semiconductor Diodes Division |
DIODE FAST RECOVERY 8A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,792 |
|
1200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
||
Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 2A MFLAT
|
封装: SOD-128 |
库存2,512 |
|
400V | 2A | 1.8V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
||
Diodes Incorporated |
DIODE SCHOTTKY 50V 1A SMA
|
封装: DO-214AC, SMA |
库存6,448 |
|
50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
||
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA DO35
|
封装: DO-204AH, DO-35, Axial |
库存588,516 |
|
30V | 200mA (DC) | 650mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
||
Comchip Technology |
DIODE ULTRA FAST RECT 400V 1A DO
|
封装: - |
Request a Quote |
|
400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
||
Sanken Electric USA Inc. |
DIODE FOR ALTERNATOR (PRESS FIT)
|
封装: - |
Request a Quote |
|
20 V | 50A | 1.2 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 20 V | - | Through Hole | Axial, Press Fit | Axial, Press Fit | -40°C ~ 235°C |
||
Microchip Technology |
DIODE GEN PURP 50V 2A G AXIAL
|
封装: - |
Request a Quote |
|
50 V | 2A | 1.5 V @ 37.7 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 50 V | - | Through Hole | G, Axial | G, Axial | -65°C ~ 155°C |
||
Microchip Technology |
DIODE GEN PURP 100V 8A TO257
|
封装: - |
Request a Quote |
|
100 V | 8A | 1.06 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 80 V | 150pF @ 5V, 1MHz | Through Hole | TO-257-3 | TO-257 | - |
||
Taiwan Semiconductor Corporation |
5A, 600V, STANDARD RECOVERY RECT
|
封装: - |
库存9,000 |
|
600 V | 5A | 1.15 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 600 V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A DO214AA
|
封装: - |
Request a Quote |
|
30 V | 1A | 390 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
||
Infineon Technologies |
DIODE GP 1.2KV 100A WAFER
|
封装: - |
Request a Quote |
|
1200 V | 100A | 1.97 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Micro Commercial Co |
Interface
|
封装: - |
Request a Quote |
|
400 V | 2A | 1.25 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 25pF @ 4V, 1MHz | Surface Mount | DO-221AA, SMB Flat Leads | SMBF | -55°C ~ 150°C |
||
STMicroelectronics |
AEROSPACE 40 V 3 A POWER SCHOTTK
|
封装: - |
库存63 |
|
40 V | 3A | 485 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 40 V | 240pF @ 5V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-LCCB | 150°C |
||
Rohm Semiconductor |
DIODE SCHOTTKY 150V 1A TUMD2M
|
封装: - |
库存21,066 |
|
150 V | 1A | 890 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 µA @ 100 V | - | Surface Mount | 2-SMD, Flat Lead | TUMD2M | 150°C (Max) |
||
Central Semiconductor Corp |
DIODE GEN PURP 5A DO201AD
|
封装: - |
Request a Quote |
|
- | 5A | 1.2 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
75NS, 1A, 1000V, HIGH EFFICIENT
|
封装: - |
库存15,000 |
|
1000 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
||
Microchip Technology |
UFR,FRR
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Taiwan Semiconductor Corporation |
2A, 20V, SCHOTTKY RECTIFIER
|
封装: - |
库存72,000 |
|
20 V | 2A | 600 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 20 V | 35pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
||
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 10A ITO220AB
|
封装: - |
Request a Quote |
|
200 V | 10A | 1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 200 V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 100V 2A DO15
|
封装: - |
Request a Quote |
|
100 V | 2A | 1 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 100 V | 50pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
||
Micro Commercial Co |
DIODE GEN PURP 400V 2A DO15
|
封装: - |
Request a Quote |
|
400 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 50pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |