页 313 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SET061203	Semtech Corporation	DIODE GEN PURP 1KV 30A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2000ns Current - Reverse Leakage @ Vr: 2µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	封装: Module	库存5,440	1000V	30A	1.2V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	2000ns	2µA @ 1000V	-	Chassis Mount	Module	-	-55°C ~ 150°C
R9G01818XX	Powerex Inc.	DIODE MODULE 1.8KV 1800A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io): 1800A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 150mA @ 1800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封装: DO-200AB, B-PUK	库存6,208	1800V	1800A	1.2V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	25µs	150mA @ 1800V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
VS-80PF40	Vishay Semiconductor Diodes Division	DIODE STD REC 80A DO-5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -55°C ~ 180°C	封装: DO-203AB, DO-5, Stud	库存7,424	400V	80A	1.46V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-55°C ~ 180°C
MBR6045PTE3/TU	Microsemi Corporation	DIODE SCHOTTKY 60A 45V TO-247AD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存4,032	-	-	-	-	-	-	-	-	-	-	-
GPA801HC0G	TSC America Inc.	DIODE, 8A, 50V, AEC-Q101, TO-220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2	库存6,288	50V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
MBR790 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 7.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 920mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2	库存7,904	90V	7.5A	920mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SR515 R0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 5A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存2,400	150V	5A	1.05V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SE50PAG-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 5A DO-221BC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.16V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 32pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-221BC, SMA Flat Leads Exposed Pad	库存3,232	400V	5A	1.16V @ 5A	Standard Recovery >500ns, > 200mA (Io)	2µs	10µA @ 400V	32pF @ 4V, 1MHz	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	DO-221BC (SMPA)	-55°C ~ 175°C
EU01V1	Sanken	DIODE GEN PURP 400V 250MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 2.5V @ 250mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存4,096	400V	250mA	2.5V @ 250mA	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
SK110BHM4G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存2,000	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS1KLHM2G	TSC America Inc.	DIODE, FAST, 0.8A, 800V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存4,448	800V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RB751S-40TE61	Rohm Semiconductor	DIODE SCHOTTKY 30V 30MA EMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 30V Capacitance @ Vr, F: 2pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 125°C (Max)	封装: SC-79, SOD-523	库存6,218,976	30V	30mA	370mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 30V	2pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	EMD2	125°C (Max)
1PS76SB10,135	Nexperia USA Inc.	DIODE SCHOTTKY 30V 200MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C (Max)	封装: SC-76, SOD-323	库存5,808	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	125°C (Max)
SK210ATR	SMC Diode Solutions	DIODE SCHOTTKY 100V SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 240pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存7,344	100V	-	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	240pF @ 5V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 150°C
ACGRC302-HF	Comchip Technology	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存24,036	100V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
V30KM60-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 5A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 650 µA @ 60 V Capacitance @ Vr, F: 3200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C	封装: -	库存12,114	60 V	5A	670 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	650 µA @ 60 V	3200pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 165°C
MER2DAL_R1_00701	Panjit International Inc.	DIODE GEN PURP 200V 2A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存54,054	200 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	25pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 175°C
IDK02G120C5XTMA1	Infineon Technologies	DIODE SIC 1.2KV 11.8A TO263-1 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 11.8A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 18 µA @ 1200 V Capacitance @ Vr, F: 182pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存2,664	1200 V	11.8A	1.65 V @ 2 A	No Recovery Time > 500mA (Io)	-	18 µA @ 1200 V	182pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-2-1	-55°C ~ 175°C
R21120	Microchip Technology	DIODE GP REV 1.2KV 22A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 22A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	1200 V	22A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 200°C
JANTXV1N6628US-TR	Microchip Technology	DIODE GEN PURP 660V 1.75A D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 660 V Current - Average Rectified (Io): 1.75A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 2 µA @ 660 V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	660 V	1.75A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2 µA @ 660 V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
MBRM140T3H	onsemi	DIODE SCHOTTKY 40V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
GL41YHE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.6KV 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1600 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	1600 V	1A	1.2 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1600 V	8pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
6A2-B	Diodes Incorporated	DIODE GEN PURP 200V 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	6A	900 mV @ 6 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Through Hole	R-6, Axial	R-6	-65°C ~ 175°C
SR804	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 8A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	40 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
RBR3LAM40ATFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 3A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	封装: -	库存16,995	40 V	3A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
SK3150B-LTP-HF	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 150 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	150 V	3A	860 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 150 V	100pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MMBD4148-D87Z	onsemi	DIODE GP 100V 200MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max)	封装: -	Request a Quote	100 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	5 µA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	150°C (Max)
UFT5005	Microchip Technology	DIODE GEN PURP 100V 50A TO204AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 15 µA @ 50 V Capacitance @ Vr, F: 225pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204AA (TO-3) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	100 V	50A	1 V @ 25 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	15 µA @ 50 V	225pF @ 10V, 1MHz	Through Hole	TO-204AA, TO-3	TO-204AA (TO-3)	-65°C ~ 175°C
60HFU-600	Microchip Technology	DIODE GEN PURP 600V DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	600 V	-	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 175°C
XBS204V19R-G	Torex Semiconductor Ltd	DIODE SCHOTTKY 40V 2A SMA-XG Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA-XG Operating Temperature - Junction: 125°C	封装: -	库存270	40 V	2A	490 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	DO-214AC, SMA	SMA-XG	125°C

SET061203

Semtech Corporation

DIODE GEN PURP 1KV 30A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2000ns
Current - Reverse Leakage @ Vr: 2µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

封装: Module

库存5,440

1000V

30A

1.2V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

2000ns

2µA @ 1000V

-

Chassis Mount

Module

-

-55°C ~ 150°C

R9G01818XX

Powerex Inc.

DIODE MODULE 1.8KV 1800A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1800V
Current - Average Rectified (Io): 1800A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25µs
Current - Reverse Leakage @ Vr: 150mA @ 1800V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封装: DO-200AB, B-PUK

库存6,208

1800V

1800A

1.2V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

25µs

150mA @ 1800V

-

Chassis Mount

DO-200AB, B-PUK

-

VS-80PF40

Vishay Semiconductor Diodes Division

DIODE STD REC 80A DO-5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -55°C ~ 180°C

封装: DO-203AB, DO-5, Stud

库存7,424

400V

80A

1.46V @ 220A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-55°C ~ 180°C

MBR6045PTE3/TU

Microsemi Corporation

DIODE SCHOTTKY 60A 45V TO-247AD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存4,032

-

GPA801HC0G

TSC America Inc.

DIODE, 8A, 50V, AEC-Q101, TO-220

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2

库存6,288

50V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 50V

50pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

MBR790 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 7.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2

库存7,904

90V

7.5A

920mV @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

SR515 R0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存2,400

150V

5A

1.05V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 150V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

SE50PAG-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 5A DO-221BC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.16V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-221BC, SMA Flat Leads Exposed Pad

库存3,232

400V

5A

1.16V @ 5A

Standard Recovery >500ns, > 200mA (Io)

2µs

10µA @ 400V

32pF @ 4V, 1MHz

Surface Mount

DO-221BC, SMA Flat Leads Exposed Pad

DO-221BC (SMPA)

-55°C ~ 175°C

EU01V1

Sanken

DIODE GEN PURP 400V 250MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 250mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存4,096

400V

250mA

2.5V @ 250mA

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 400V

-

Through Hole

Axial

-

-40°C ~ 150°C

SK110BHM4G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存2,000

100V

1A

850mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

RS1KLHM2G

TSC America Inc.

DIODE, FAST, 0.8A, 800V, 500NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存4,448

800V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

RB751S-40TE61

Rohm Semiconductor

DIODE SCHOTTKY 30V 30MA EMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500nA @ 30V
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: EMD2
Operating Temperature - Junction: 125°C (Max)

封装: SC-79, SOD-523

库存6,218,976

30V

30mA

370mV @ 1mA

Small Signal =< 200mA (Io), Any Speed

-

500nA @ 30V

2pF @ 1V, 1MHz

Surface Mount

SC-79, SOD-523

EMD2

125°C (Max)

1PS76SB10,135

Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)

封装: SC-76, SOD-323

库存5,808

30V

200mA (DC)

800mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

2µA @ 25V

10pF @ 1V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

125°C (Max)

SK210ATR

SMC Diode Solutions

DIODE SCHOTTKY 100V SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: 240pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存7,344

100V

-

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

240pF @ 5V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 150°C

ACGRC302-HF

Comchip Technology

DIODE GEN PURP 100V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存24,036

100V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 100V

20pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

V30KM60-M3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 5A FLATPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Capacitance @ Vr, F: 3200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C

封装: -

库存12,114

60 V

5A

670 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

650 µA @ 60 V

3200pF @ 4V, 1MHz

Surface Mount

8-PowerTDFN

FlatPAK (5x6)

-40°C ~ 165°C

MER2DAL_R1_00701

Panjit International Inc.

DIODE GEN PURP 200V 2A SOD123FL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存54,054

200 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 200 V

25pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 175°C

IDK02G120C5XTMA1

Infineon Technologies

DIODE SIC 1.2KV 11.8A TO263-1

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 11.8A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Capacitance @ Vr, F: 182pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存2,664

1200 V

11.8A

1.65 V @ 2 A

No Recovery Time > 500mA (Io)

-

18 µA @ 1200 V

182pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-2-1

-55°C ~ 175°C

R21120

Microchip Technology

DIODE GP REV 1.2KV 22A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 22A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

1200 V

22A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1200 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 200°C

JANTXV1N6628US-TR

Microchip Technology

DIODE GEN PURP 660V 1.75A D-5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660 V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

660 V

1.75A

1.35 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

2 µA @ 660 V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 150°C

MBRM140T3H

onsemi

DIODE SCHOTTKY 40V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

40 V

1A

550 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Surface Mount

DO-216AA

Powermite

-55°C ~ 125°C

GL41YHE3_A-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.6KV 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

1600 V

1A

1.2 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1600 V

8pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

6A2-B

Diodes Incorporated

DIODE GEN PURP 200V 6A R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

200 V

6A

900 mV @ 6 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Through Hole

R-6, Axial

R-6

-65°C ~ 175°C

SR804

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 8A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

40 V

8A

550 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

RBR3LAM40ATFTR

Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

封装: -

库存16,995

40 V

3A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 40 V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

SK3150B-LTP-HF

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

150 V

3A

860 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 150 V

100pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

MMBD4148-D87Z

onsemi

DIODE GP 100V 200MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)

封装: -

Request a Quote

100 V

200mA

1 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

5 µA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

150°C (Max)

UFT5005

Microchip Technology

DIODE GEN PURP 100V 50A TO204AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 15 µA @ 50 V
Capacitance @ Vr, F: 225pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

100 V

50A

1 V @ 25 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

15 µA @ 50 V

225pF @ 10V, 1MHz

Through Hole

TO-204AA, TO-3

TO-204AA (TO-3)

-65°C ~ 175°C

60HFU-600

Microchip Technology

DIODE GEN PURP 600V DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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600 V

-

Standard Recovery >500ns, > 200mA (Io)

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 175°C

XBS204V19R-G

Torex Semiconductor Ltd

DIODE SCHOTTKY 40V 2A SMA-XG

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA-XG
Operating Temperature - Junction: 125°C

封装: -

库存270

40 V

2A

490 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

-

Surface Mount

DO-214AC, SMA

SMA-XG

125°C