页 305 - 二极管 - 整流器 - 单 | 分立半导体产品 | 深圳黑森尔电子
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二极管 - 整流器 - 单

记录 52,788
页  305/1,760
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制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CR5F-120 BK
Central Semiconductor Corp

DIODE GEN PURP 1.2KV 5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-201AD, Axial
库存3,280
1200V
5A
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
hot DSR8V600
Diodes Incorporated

DIODE GEN PURP 600V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 3.2V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 23ns
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: TO-220-2
库存134,052
600V
8A
3.2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
23ns
20µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
MBRA210ET3
ON Semiconductor

DIODE SCHOTTKY 10V 2A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 10V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-214AC, SMA
库存7,600
10V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 10V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 150°C
hot 1N4148W-7
Diodes Incorporated

DIODE GEN PURP 100V 300MA SOD123

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 300mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: SOD-123
库存353,664
100V
300mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SOD-123
SOD-123
-65°C ~ 150°C
1N4007/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-204AL, DO-41, Axial
库存3,904
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
S2KW4C-1D
Semtech Corporation

DIODE GEN PURP 4KV 4A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 4V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 2µA @ 4000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: Module
库存3,504
4000V
4A
4V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
2µs
2µA @ 4000V
-
Chassis Mount
Module
-
-55°C ~ 150°C
R5020413LSWA
Powerex Inc.

DIODE GEN PURP 400V 125A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 125A
  • Voltage - Forward (Vf) (Max) @ If: 2.5V @ 470A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 700ns
  • Current - Reverse Leakage @ Vr: 45mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: DO-205AA, DO-8, Stud
库存4,352
400V
125A
2.5V @ 470A
Standard Recovery >500ns, > 200mA (Io)
700ns
45mA @ 400V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 150°C
150K20A
GeneSiC Semiconductor

DIODE GEN PURP 200V 150A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.33V @ 150A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 35mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 200°C
封装: DO-205AA, DO-8, Stud
库存6,896
200V
150A
1.33V @ 150A
Standard Recovery >500ns, > 200mA (Io)
-
35mA @ 200V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 200°C
VS-25ETS10S-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 25A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.14V @ 25A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,192
1000V
25A
1.14V @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 1000V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-40°C ~ 150°C
SE50PADHM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 5A DO-221BC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.16V @ 5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 32pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
  • Supplier Device Package: DO-221BC (SMPA)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-221BC, SMA Flat Leads Exposed Pad
库存2,064
200V
5A
1.16V @ 5A
Standard Recovery >500ns, > 200mA (Io)
2µs
10µA @ 200V
32pF @ 4V, 1MHz
Surface Mount
DO-221BC, SMA Flat Leads Exposed Pad
DO-221BC (SMPA)
-55°C ~ 175°C
SR003 R0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: DO-204AL, DO-41, Axial
库存3,248
30V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
1N4935GHR1G
TSC America Inc.

DIODE, FAST, 1A, 200V, 200NS, AE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-204AL, DO-41, Axial
库存6,592
200V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 200V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
CDST-116-G
Comchip Technology

DIODE GEN PURP 75V 215MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 215mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3ns
  • Current - Reverse Leakage @ Vr: 5µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
  • Operating Temperature - Junction: 150°C (Max)
封装: TO-236-3, SC-59, SOT-23-3
库存4,928
75V
215mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
3ns
5µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
150°C (Max)
hot SBR1U200P1-7
Diodes Incorporated

DIODE SBR 200V 1A POWERDI123

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 820mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 50µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: POWERDI?123
  • Supplier Device Package: PowerDI? 123
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: POWERDI?123
库存317,280
200V
1A
820mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 200V
-
Surface Mount
POWERDI?123
PowerDI? 123
-65°C ~ 175°C
SDUR6060W
SMC Diode Solutions

DIODE GEN PURP 600V 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-247-2
库存7,488
600V
60A
2V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100µA @ 600V
-
Through Hole
TO-247-2
TO-247AC
-55°C ~ 150°C
hot S2M-13-F
Diodes Incorporated

DIODE GEN PURP 1KV 1.5A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-214AA, SMB
库存506,160
1000V
1.5A
1.15V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
A14PX276
Harris Corporation

RECTIFIER DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
S36140
Microchip Technology

DIODE GEN PURP 1.4KV 70A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
Request a Quote
1400 V
70A
1.25 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
25 µA @ 1400 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 200°C
UGF10GH
Taiwan Semiconductor Corporation

25NS, 10A, 400V, ULTRA FAST RECO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存3,000
400 V
10A
1.25 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
5 µA @ 400 V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
VS-100BGQ030HN4
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 30V 100A POWERTAB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 630 mV @ 100 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.4 mA @ 30 V
  • Capacitance @ Vr, F: 3800pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: PowerTab®
  • Supplier Device Package: PowerTab®
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
30 V
100A
630 mV @ 100 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.4 mA @ 30 V
3800pF @ 5V, 1MHz
Through Hole
PowerTab®
PowerTab®
-55°C ~ 150°C
UJ3D06516TS
Qorvo

DIODE SIL CARB 650V 16A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Capacitance @ Vr, F: 500pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存1,110
650 V
16A
1.7 V @ 16 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
500pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
BYM07-150HE3-83
Vishay General Semiconductor - Diodes Division

DIODE GP 150V 500MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
Request a Quote
150 V
500mA
1.25 V @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 150 V
7pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
JAN1N6911UTK2-TR
Microchip Technology

DIODE SCHOTTKY 30V 25A THINKEY2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 540 mV @ 25 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.2 mA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
Request a Quote
30 V
25A
540 mV @ 25 A
No Recovery Time > 500mA (Io)
-
1.2 mA @ 30 V
-
Surface Mount
ThinKey™2
ThinKey™2
-65°C ~ 150°C
ACGRC505-HF
Comchip Technology

DIODE GEN PURP 600V 5A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
600 V
5A
1.15 V @ 5 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
25pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
NTE641
NTE Electronics, Inc

DIODE SCHOTTKY 60V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 60 V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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60 V
2A
700 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 60 V
150pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA
-55°C ~ 150°C
SB1250
Diotec Semiconductor

IC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: -
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50 V
12A
680 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 50 V
-
Through Hole
Axial
Axial
-50°C ~ 150°C
PMEG6020EP-QX
Nexperia USA Inc.

DIODE SCHOTTKY 60V 2A SOD128

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 µA @ 60 V
  • Capacitance @ Vr, F: 240pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD-128/CFP5
  • Operating Temperature - Junction: 150°C
封装: -
库存8,940
60 V
2A
530 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
150 µA @ 60 V
240pF @ 1V, 1MHz
Surface Mount
SOD-128
SOD-128/CFP5
150°C
PT800M
Diotec Semiconductor

IC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: -
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1000 V
8A
1.1 V @ 8 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1000 V
-
Through Hole
TO-220-2
TO-220AC
-50°C ~ 150°C
SB12100-AP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 100 V
  • Capacitance @ Vr, F: 500pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
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100 V
12A
850 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 100 V
500pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
JANTXV1N3164R
Microchip Technology

DIODE GP 200V 300A DO205AB DO9

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB (DO-9)
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
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200 V
300A
1.55 V @ 940 A
Standard Recovery >500ns, > 200mA (Io)
-
10 mA @ 200 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-205AB (DO-9)
-65°C ~ 200°C