页 1720 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1SS388(TL3,F,D)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 45V 100MA ESC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 10V Capacitance @ Vr, F: 18pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: -40°C ~ 100°C	封装: SC-79, SOD-523	库存92,400	45V	100mA	600mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 10V	18pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	-40°C ~ 100°C
1N3614GP-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存5,360	-	-	-	-	-	-	-	-	-	-	-
JAN1N3644	Microsemi Corporation	DIODE GEN PURP 1.5KV 250MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1500V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: S, Axial Supplier Device Package: S, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: S, Axial	库存3,168	1500V	250mA	5V @ 250mA	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1500V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
S1JHE3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存993,600	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
AS4PDHM3/87A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 2.4A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2.4A (DC) Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-277, 3-PowerDFN	库存2,704	200V	2.4A (DC)	962mV @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
BYW29G-200-TR	STMicroelectronics	DIODE GEN PURP 200V 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max)	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存14,460	200V	8A	1.15V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	150°C (Max)
VS-1N1204RA	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-203AA, DO-4, Stud	库存6,432	400V	12A	1.35V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	1.5mA @ 400V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 200°C
HERAF1604G C0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 16A, 300V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2 Full Pack	库存2,704	300V	16A	1V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	150pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
ESH2PDHM3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-220AA	库存7,856	200V	2A	980mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
SB240S-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 2A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C	封装: DO-204AL, DO-41, Axial	库存423,780	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 125°C
SB150-T	Diodes Incorporated	DIODE SCHOTTKY 50V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存56,400	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
ES1AL RTG	TSC America Inc.	DIODE, SUPER FAST, 1A, 50V, 35NS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存4,304	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1N4936G-T	Diodes Incorporated	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存2,448	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
SF14GHR1G	TSC America Inc.	DIODE, SUPER FAST, 1A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存4,176	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR006HR1G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 700mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存3,856	60V	500mA	700mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	80pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
CDBV3-70-G	Comchip Technology	DIODE SCHOTTKY 70V 70MA SOT323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 2ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: 125°C (Max)	封装: SC-70, SOT-323	库存3,408	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	2ns	100nA @ 50V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	125°C (Max)
SE10DJHM3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: 67pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab) Variant	库存3,808	600V	3A	1.15V @ 10A	Standard Recovery >500ns, > 200mA (Io)	3µs	15µA @ 600V	67pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab) Variant	TO-263AC (SMPD)	-55°C ~ 175°C
VIT5202-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 200V 5A TO262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -40°C ~ 175°C	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存25,908	200V	5A	880mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 200V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-40°C ~ 175°C
MMBD4448H-7-F	Diodes Incorporated	DIODE GEN PURP 80V 250MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 70V Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-236-3, SC-59, SOT-23-3	库存696,000	80V	250mA	1.25V @ 150mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 70V	3.5pF @ 6V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-65°C ~ 150°C
NRVUS120VT3G-GA01	onsemi	DIODE GEN PURP 200V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	2A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	2 µA @ 200 V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
V15PM15HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 15A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 150 V Capacitance @ Vr, F: 1030pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	150 V	15A	1.08 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 150 V	1030pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
SFT17G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 500 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	500 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 500 V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
CD1A80	Microchip Technology	DIODE SCHOTTKY 80V 1A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 80 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	80 V	1A	750 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 80 V	-	Surface Mount	Die	Die	-55°C ~ 125°C
FR105GH	Taiwan Semiconductor Corporation	250NS, 1A, 600V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存29,970	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N3289R	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	200 V	100A	1.55 V @ 310 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 200 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
NSB8KTHE3_B-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 800V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	800 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	55pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
RS2DAF-T	Taiwan Semiconductor Corporation	150NS, 2A, 200V, FAST RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 21pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存22,500	200 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 200 V	21pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF	-55°C ~ 150°C
SS34HM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 40V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S1JF-T	Taiwan Semiconductor Corporation	1A, 600V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存22,500	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	7pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF	-55°C ~ 150°C
R2180	Microchip Technology	RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 22A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	800 V	22A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C

1SS388(TL3,F,D)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 45V 100MA ESC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 10V
Capacitance @ Vr, F: 18pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC
Operating Temperature - Junction: -40°C ~ 100°C

封装: SC-79, SOD-523

库存92,400

45V

100mA

600mV @ 50mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 10V

18pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

ESC

-40°C ~ 100°C

1N3614GP-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存5,360

-

JAN1N3644

Microsemi Corporation

DIODE GEN PURP 1.5KV 250MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1500V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: S, Axial
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: S, Axial

库存3,168

1500V

250mA

5V @ 250mA

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1500V

-

Through Hole

S, Axial

-65°C ~ 175°C

S1JHE3/5AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存993,600

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

1µA @ 600V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

AS4PDHM3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2.4A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 962mV @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-277, 3-PowerDFN

库存2,704

200V

2.4A (DC)

962mV @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

10µA @ 200V

60pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

BYW29G-200-TR

STMicroelectronics

DIODE GEN PURP 200V 8A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存14,460

200V

8A

1.15V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

150°C (Max)

VS-1N1204RA

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-203AA, DO-4, Stud

库存6,432

400V

12A

1.35V @ 12A

Standard Recovery >500ns, > 200mA (Io)

-

1.5mA @ 400V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 200°C

HERAF1604G C0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 16A, 300V

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2 Full Pack

库存2,704

300V

16A

1V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 300V

150pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

ESH2PDHM3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO220AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-220AA

库存7,856

200V

2A

980mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 200V

25pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

SB240S-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 2A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C

封装: DO-204AL, DO-41, Axial

库存423,780

40V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 125°C

SB150-T

Diodes Incorporated

DIODE SCHOTTKY 50V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存56,400

50V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

ES1AL RTG

TSC America Inc.

DIODE, SUPER FAST, 1A, 50V, 35NS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存4,304

50V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 50V

10pF @ 1V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

1N4936G-T

Diodes Incorporated

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存2,448

400V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

SF14GHR1G

TSC America Inc.

DIODE, SUPER FAST, 1A, 200V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存4,176

200V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 200V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

SR006HR1G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 700mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存3,856

60V

500mA

700mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

80pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

CDBV3-70-G

Comchip Technology

DIODE SCHOTTKY 70V 70MA SOT323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 70mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)

封装: SC-70, SOT-323

库存3,408

70V

70mA (DC)

1V @ 15mA

Small Signal =< 200mA (Io), Any Speed

2ns

100nA @ 50V

5pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SOT-323

125°C (Max)

SE10DJHM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 15µA @ 600V
Capacitance @ Vr, F: 67pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab) Variant

库存3,808

600V

3A

1.15V @ 10A

Standard Recovery >500ns, > 200mA (Io)

3µs

15µA @ 600V

67pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab) Variant

TO-263AC (SMPD)

-55°C ~ 175°C

VIT5202-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 200V 5A TO262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -40°C ~ 175°C

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存25,908

200V

5A

880mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 200V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-40°C ~ 175°C

MMBD4448H-7-F

Diodes Incorporated

DIODE GEN PURP 80V 250MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 70V
Capacitance @ Vr, F: 3.5pF @ 6V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-236-3, SC-59, SOT-23-3

库存696,000

80V

250mA

1.25V @ 150mA

Fast Recovery =< 500ns, > 200mA (Io)

4ns

100nA @ 70V

3.5pF @ 6V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

-65°C ~ 150°C

NRVUS120VT3G-GA01

onsemi

DIODE GEN PURP 200V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

200 V

2A

875 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

2 µA @ 200 V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 175°C

V15PM15HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 15A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Capacitance @ Vr, F: 1030pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

150 V

15A

1.08 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 150 V

1030pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 175°C

SFT17G

Taiwan Semiconductor Corporation

DIODE GEN PURP 500V 1A TS-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

500 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 500 V

10pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

CD1A80

Microchip Technology

DIODE SCHOTTKY 80V 1A DIE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 80 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

80 V

1A

750 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 80 V

-

Surface Mount

Die

-55°C ~ 125°C

FR105GH

Taiwan Semiconductor Corporation

250NS, 1A, 600V, FAST RECOVERY R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存29,970

600 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

5 µA @ 600 V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

1N3289R

Microchip Technology

STANDARD RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 310 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

200 V

100A

1.55 V @ 310 A

Standard Recovery >500ns, > 200mA (Io)

-

10 mA @ 200 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

NSB8KTHE3_B-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

800 V

8A

1.1 V @ 8 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 800 V

55pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

RS2DAF-T

Taiwan Semiconductor Corporation

150NS, 2A, 200V, FAST RECOVERY R

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 21pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存22,500

200 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 200 V

21pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF

-55°C ~ 150°C

SS34HM3_A-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

S1JF-T

Taiwan Semiconductor Corporation

1A, 600V, STANDARD RECOVERY RECT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存22,500

600 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

7pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF

-55°C ~ 150°C

R2180

Microchip Technology

RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 22A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

800 V

22A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 800 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C