页 1691 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MA3J70000L	Panasonic Electronic Components	DIODE SCHOTTKY 40V 500MA SMINI3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: 60pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F1 Operating Temperature - Junction: 125°C (Max)	封装: SC-85	库存4,272	40V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	100µA @ 35V	60pF @ 0V, 1MHz	Surface Mount	SC-85	SMini3-F1	125°C (Max)
SD41	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 30A DO4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 680mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 35V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存3,312	35V	30A	680mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 35V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
VS-1N2130A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 60A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 188A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 150V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-203AB, DO-5, Stud	库存2,944	150V	60A	1.3V @ 188A	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 150V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 200°C
RFN20TF6S	Rohm Semiconductor	DIODE GEN PURP 600V 20A TO220NFM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C (Max)	封装: TO-220-2	库存3,728	600V	20A	1.55V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Through Hole	TO-220-2	TO-220NFM	150°C (Max)
UH5JT-E3/4W	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存5,968	600V	8A	3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	5µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
RS2AHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存7,248	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
P300G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	封装: DO-201AD, Axial	库存6,416	400V	3A	1.2V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 400V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
CD0603-B0230	Bourns Inc.	DIODE SCHOTTKY 30V 200MA 0603 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 30V Capacitance @ Vr, F: 12pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Operating Temperature - Junction: -40°C ~ 125°C	封装: 0603 (1608 Metric)	库存6,976	30V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	30µA @ 30V	12pF @ 10V, 1MHz	Surface Mount	0603 (1608 Metric)	0603	-40°C ~ 125°C
EGP10A-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 22pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存6,608	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	22pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
GP10M-4007HE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	封装: DO-204AL, DO-41, Axial	库存3,568	1000V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
MCL101C-TR3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 30MA MICROMLF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200nA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: MicroMELF Operating Temperature - Junction: -65°C ~ 150°C	封装: 2-SMD, No Lead	库存2,544	40V	30mA	900mV @ 15mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200nA @ 30V	-	Surface Mount	2-SMD, No Lead	MicroMELF	-65°C ~ 150°C
GP2D050A120B	Global Power Technologies Group	DIODE SCHOTTKY 1.2KV 50A TO247-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: 3174pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-247-2	库存3,232	1200V	50A (DC)	1.8V @ 50A	No Recovery Time > 500mA (Io)	0ns	100µA @ 1200V	3174pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
SBR1A400P1-7	Diodes Incorporated	DIODE SBR 1A PDI123 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85ns Current - Reverse Leakage @ Vr: 50µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -65°C ~ 150°C	封装: POWERDI?123	库存28,644	400V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	50µA @ 400V	-	Surface Mount	POWERDI?123	PowerDI? 123	-65°C ~ 150°C
ISL9R860PF2	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 8A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2 Full Pack	库存314,880	600V	8A	2.4V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-55°C ~ 150°C
TBAT54S,LM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 140MA SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 140mA Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-236-3, SC-59, SOT-23-3	库存151,950	30V	140mA	580mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1.5ns	2µA @ 25V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-55°C ~ 150°C
JANTXV1N3913R	Microchip Technology	DIODE GEN PURP 400V 30A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	400 V	30A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 150°C
1N6621U-TR	Microchip Technology	DIODE GP 440V 1.2A A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 440 V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 500 nA @ 440 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	440 V	1.2A	1.4 V @ 1.2 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	500 nA @ 440 V	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 150°C
BAV5004WSQ-7	Diodes Incorporated	DIODE GEN PURP 400V 300MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 240 V Capacitance @ Vr, F: 0.9pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	300mA	1.29 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 240 V	0.9pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
ES1JF-T	Taiwan Semiconductor Corporation	35NS, 1A, 600V, SUPER FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存22,500	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	7pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF	-55°C ~ 150°C
S8KC	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 8A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存7,074	800 V	8A	-	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	48pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
PE2BBH	Taiwan Semiconductor Corporation	20NS, 2A, 100V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存18,000	100 V	2A	900 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	2 µA @ 100 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MSASC100H45HR	Microchip Technology	DIODE SCHOTTKY 45V 100A THINKEY1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™1 Supplier Device Package: ThinKey™1 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	45 V	100A	650 mV @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	ThinKey™1	ThinKey™1	-65°C ~ 150°C
S3440	Microchip Technology	RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	400 V	45A	1.15 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 200°C
SS34-HF	Comchip Technology	DIODE SCHOTTKY 40V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 450pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	封装: -	库存113,025	40 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	450pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
BAS21LS-QYL	Nexperia USA Inc.	DIODE GP 200V 250MA DFN1006BD-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: DFN1006BD-2 Operating Temperature - Junction: 150°C	封装: -	库存7,935	200 V	250mA	1.25 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 200 V	2pF @ 0V, 1MHz	Surface Mount	SOD-882	DFN1006BD-2	150°C
JAN1N5804US-TR	Microchip Technology	DIODE GEN PURP 100V 2.5A D-5A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	100 V	2.5A	975 mV @ 2.5 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 100 V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
FFSM0865B	onsemi	DIODE SIL CARB 650V 11.6A 4PQFN Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 11.6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Capacitance @ Vr, F: 336pF @ 1V, 100kHz Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Supplier Device Package: 4-PQFN (8x8) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	650 V	11.6A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	336pF @ 1V, 100kHz	Surface Mount	4-PowerTSFN	4-PQFN (8x8)	-55°C ~ 175°C
DLA10IM800UC-TUB	IXYS	DIODE GEN PURP 800V 10A TO252AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 3pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	800 V	10A	1.22 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	3pF @ 400V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
1N4152-BK	Central Semiconductor Corp	DIODE GEN PURP 40V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 50 nA @ 40 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	40 V	150mA	880 mV @ 20 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	50 nA @ 40 V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
DSK120	MDD	DIODE SCHOTTKY 200V 1A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 200 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	200 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 200 V	80pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 125°C

MA3J70000L

Panasonic Electronic Components

DIODE SCHOTTKY 40V 500MA SMINI3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F1
Operating Temperature - Junction: 125°C (Max)

封装: SC-85

库存4,272

40V

500mA

550mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

5ns

100µA @ 35V

60pF @ 0V, 1MHz

Surface Mount

SC-85

SMini3-F1

125°C (Max)

SD41

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 30A DO4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 680mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存3,312

35V

30A

680mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 35V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-55°C ~ 150°C

VS-1N2130A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 60A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 188A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-203AB, DO-5, Stud

库存2,944

150V

60A

1.3V @ 188A

Standard Recovery >500ns, > 200mA (Io)

-

10mA @ 150V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 200°C

RFN20TF6S

Rohm Semiconductor

DIODE GEN PURP 600V 20A TO220NFM

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220NFM
Operating Temperature - Junction: 150°C (Max)

封装: TO-220-2

库存3,728

600V

20A

1.55V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

10µA @ 600V

-

Through Hole

TO-220-2

TO-220NFM

150°C (Max)

UH5JT-E3/4W

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存5,968

600V

8A

3V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

40ns

5µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

RS2AHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存7,248

50V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 50V

20pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

P300G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C

封装: DO-201AD, Axial

库存6,416

400V

3A

1.2V @ 3A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 400V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-50°C ~ 150°C

CD0603-B0230

Bourns Inc.

DIODE SCHOTTKY 30V 200MA 0603

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 30V
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Supplier Device Package: 0603
Operating Temperature - Junction: -40°C ~ 125°C

封装: 0603 (1608 Metric)

库存6,976

30V

200mA

500mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

30µA @ 30V

12pF @ 10V, 1MHz

Surface Mount

0603 (1608 Metric)

0603

-40°C ~ 125°C

EGP10A-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 22pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存6,608

50V

1A

950mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

22pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

GP10M-4007HE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

封装: DO-204AL, DO-41, Axial

库存3,568

1000V

1A

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

MCL101C-TR3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 30MA MICROMLF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 900mV @ 15mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200nA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: MicroMELF
Operating Temperature - Junction: -65°C ~ 150°C

封装: 2-SMD, No Lead

库存2,544

40V

30mA

900mV @ 15mA

Fast Recovery =< 500ns, > 200mA (Io)

-

200nA @ 30V

-

Surface Mount

2-SMD, No Lead

MicroMELF

-65°C ~ 150°C

GP2D050A120B

Global Power Technologies Group

DIODE SCHOTTKY 1.2KV 50A TO247-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: 3174pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-2

库存3,232

1200V

50A (DC)

1.8V @ 50A

No Recovery Time > 500mA (Io)

0ns

100µA @ 1200V

3174pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

SBR1A400P1-7

Diodes Incorporated

DIODE SBR 1A PDI123

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: POWERDI?123
Supplier Device Package: PowerDI? 123
Operating Temperature - Junction: -65°C ~ 150°C

封装: POWERDI?123

库存28,644

400V

1A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

85ns

50µA @ 400V

-

Surface Mount

POWERDI?123

PowerDI? 123

-65°C ~ 150°C

ISL9R860PF2

Fairchild/ON Semiconductor

DIODE GEN PURP 600V 8A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2 Full Pack

库存314,880

600V

8A

2.4V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

100µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220F-2L

-55°C ~ 150°C

TBAT54S,LM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 140MA SOT23

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 140mA
Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5ns
Current - Reverse Leakage @ Vr: 2µA @ 25V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-236-3, SC-59, SOT-23-3

库存151,950

30V

140mA

580mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

1.5ns

2µA @ 25V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

-55°C ~ 150°C

JANTXV1N3913R

Microchip Technology

DIODE GEN PURP 400V 30A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

400 V

30A

1.4 V @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 150°C

1N6621U-TR

Microchip Technology

DIODE GP 440V 1.2A A SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 440 V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

440 V

1.2A

1.4 V @ 1.2 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

500 nA @ 440 V

-

Surface Mount

SQ-MELF, A

A, SQ-MELF

-65°C ~ 150°C

BAV5004WSQ-7

Diodes Incorporated

DIODE GEN PURP 400V 300MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 1 µA @ 240 V
Capacitance @ Vr, F: 0.9pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

300mA

1.29 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

1 µA @ 240 V

0.9pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 150°C

ES1JF-T

Taiwan Semiconductor Corporation

35NS, 1A, 600V, SUPER FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存22,500

600 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

7pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAF

-55°C ~ 150°C

S8KC

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 8A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存7,074

800 V

8A

-

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 800 V

48pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

PE2BBH

Taiwan Semiconductor Corporation

20NS, 2A, 100V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存18,000

100 V

2A

900 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

2 µA @ 100 V

30pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

MSASC100H45HR

Microchip Technology

DIODE SCHOTTKY 45V 100A THINKEY1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™1
Supplier Device Package: ThinKey™1
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

45 V

100A

650 mV @ 80 A

Fast Recovery =< 500ns, > 200mA (Io)

-

Surface Mount

ThinKey™1

-65°C ~ 150°C

S3440

Microchip Technology

RECTIFIER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 45A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

400 V

45A

1.15 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 400 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 200°C

SS34-HF

Comchip Technology

DIODE SCHOTTKY 40V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

库存113,025

40 V

3A

550 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

450pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

BAS21LS-QYL

Nexperia USA Inc.

DIODE GP 200V 250MA DFN1006BD-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: DFN1006BD-2
Operating Temperature - Junction: 150°C

封装: -

库存7,935

200 V

250mA

1.25 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

100 nA @ 200 V

2pF @ 0V, 1MHz

Surface Mount

SOD-882

DFN1006BD-2

150°C

JAN1N5804US-TR

Microchip Technology

DIODE GEN PURP 100V 2.5A D-5A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2.5A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

100 V

2.5A

975 mV @ 2.5 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 100 V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

D-5A

-65°C ~ 175°C

FFSM0865B

onsemi

DIODE SIL CARB 650V 11.6A 4PQFN

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 11.6A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Capacitance @ Vr, F: 336pF @ 1V, 100kHz
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Supplier Device Package: 4-PQFN (8x8)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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650 V

11.6A

1.7 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

40 µA @ 650 V

336pF @ 1V, 100kHz

Surface Mount

4-PowerTSFN

4-PQFN (8x8)

-55°C ~ 175°C

DLA10IM800UC-TUB

IXYS

DIODE GEN PURP 800V 10A TO252AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 10 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 3pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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800 V

10A

1.22 V @ 10 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 800 V

3pF @ 400V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

1N4152-BK

Central Semiconductor Corp

DIODE GEN PURP 40V 150MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 50 nA @ 40 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

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40 V

150mA

880 mV @ 20 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

50 nA @ 40 V

2pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 200°C

DSK120

MDD

DIODE SCHOTTKY 200V 1A SOD123FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

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200 V

1A

950 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 200 V

80pF @ 4V, 1MHz

Surface Mount

SOD-123F

SOD-123FL

-55°C ~ 125°C