页 1683 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VS-50WQ04FNTRLPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 5.5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5.5A Voltage - Forward (Vf) (Max) @ If: 510mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 40V Capacitance @ Vr, F: 405pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存5,808	40V	5.5A	510mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 40V	405pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-40°C ~ 150°C
SS2PH10HE3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-220AA	库存3,472	100V	2A	800mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 100V	65pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
1N5392S-T	Diodes Incorporated	DIODE GEN PURP 100V 1.5A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存3,408	100V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
8TQ060	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 8A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 550µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存3,712	60V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	550µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
S4KW16KA-4	Semtech Corporation	DIODE GEN PURP 16KV 6A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 16000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 16V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 4µA @ 16000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	封装: Module	库存7,696	16000V	6A	16V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	2µs	4µA @ 16000V	-	Chassis Mount	Module	-	-55°C ~ 150°C
R7001603XXUA	Powerex Inc.	DIODE GEN PURP 1.6KV 300A DO200 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 9µs Current - Reverse Leakage @ Vr: 50mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-200AA, A-PUK	库存6,384	1600V	300A	2.15V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	9µs	50mA @ 1600V	-	Chassis, Stud Mount	DO-200AA, A-PUK	DO-200AA, R62	-65°C ~ 200°C
R7011004XXUA	Powerex Inc.	DIODE GEN PURP 1KV 450A DO200 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 450A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 11µs Current - Reverse Leakage @ Vr: 50mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: DO-200AA, R62 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-200AA, A-PUK	库存5,952	1000V	450A	1.6V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	11µs	50mA @ 1000V	-	Chassis, Stud Mount	DO-200AA, A-PUK	DO-200AA, R62	-65°C ~ 175°C
JANTXV1N5804	Microsemi Corporation	DIODE GEN PURP 100V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	封装: A, Axial	库存7,056	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
RJS6004TDPP-EJ#T2	Renesas Electronics America	DIODE SCHOTTKY 600V 10A TO220FP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-3 Full Pack	库存5,152	600V	10A (DC)	1.8V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	10µA @ 600V	-	Surface Mount	TO-220-3 Full Pack	TO-220FP	-55°C ~ 150°C
1N5807	Semtech Corporation	D MET 6A SFST 50V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存6,256	-	-	-	-	-	-	-	-	-	-	-
LSM145 MELF	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-213AB, MELF (Glass)	库存7,440	45V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 150°C
MB3045S-E3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 30A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,792	45V	30A	700mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
RB168LAM100TR	Rohm Semiconductor	DIODE SCHOTTKY 100V 1A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 810mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400nA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	封装: SOD-128	库存2,864	100V	1A	810mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400nA @ 100V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
JANTX1N5615	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: 45pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A-PAK Operating Temperature - Junction: -65°C ~ 175°C	封装: A, Axial	库存30,390	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	45pF @ 12V, 1MHz	Through Hole	A, Axial	A-PAK	-65°C ~ 175°C
MBRD1045TR	SMC Diode Solutions	DIODE SCHOTTKY 45V DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 45V Capacitance @ Vr, F: 400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存5,408	45V	-	700mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	400pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
BAS20,215	Nexperia USA Inc.	DIODE GEN PURP 150V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB (SOT23) Operating Temperature - Junction: 150°C (Max)	封装: TO-236-3, SC-59, SOT-23-3	库存118,476	150V	200mA (DC)	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB (SOT23)	150°C (Max)
STPS1150A	STMicroelectronics	DIODE SCHOTTKY 150V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 820mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: 175°C (Max)	封装: DO-214AC, SMA	库存1,133,280	150V	1A	820mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 150V	-	Surface Mount	DO-214AC, SMA	SMA	175°C (Max)
CDBB140-HF	Comchip Technology	DIODE SCHOTTKY 40V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 175°C	封装: DO-214AA, SMB	库存173,100	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	120pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-50°C ~ 175°C
CMS11(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 2A MFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 95pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	封装: SOD-128	库存180,000	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	95pF @ 10V, 1MHz	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
SB3H100L-5700E3-72	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
DSC04C065D1-13	Diodes Incorporated	SILICON CARBIDE RECTIFIER TO252 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 170 µA @ 650 V Capacitance @ Vr, F: 150pF @ 100mV, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	650 V	4A	1.7 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	150pF @ 100mV, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (Type WX)	-55°C ~ 175°C
QR806F_T0_00001	Panjit International Inc.	DIODE GEN PURP 600V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 3 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	600 V	8A	1.65 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	3 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 175°C
NXPLQSC106506Q	WeEn Semiconductors	DIODE SCHOTTKY 650V 10A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 230 µA @ 650 V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	封装: -	Request a Quote	650 V	10A	1.85 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	250pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
TSDGLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存47,430	400 V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	15pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 175°C
S504120	Microchip Technology	DIODE GP 1.2KV 300A DO205AB DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	1200 V	300A	1.25 V @ 1000 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 1200 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C
SDURD1530	SMC Diode Solutions	DIODE GEN PURP 300V 15A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	300 V	15A	1.26 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	10 µA @ 300 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 175°C
RS1GLH	Taiwan Semiconductor Corporation	150NS, 0.8A, 400V, FAST RECOVERY Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	1A	1.3 V @ 800 mA	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	10pF @ 4V, 1MHz	Surface Mount	SOD-123	Sub SMA	-55°C ~ 150°C
MMSD914T1	onsemi	DIODE SWITCH 100V SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -	封装: -	Request a Quote	100 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	5 µA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-
BX320_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 200V 3A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	库存24,054	200 V	3A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 175°C
CGRAT105L-HF	Comchip Technology	DIODE GEN PURP 1KV 1A 2010 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2010/DO-214AC Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	1000 V	1A	930 mV @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	8.2pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2010/DO-214AC	-65°C ~ 175°C

VS-50WQ04FNTRLPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5.5A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 5.5A
Voltage - Forward (Vf) (Max) @ If: 510mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 40V
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,808

40V

5.5A

510mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 40V

405pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-40°C ~ 150°C

SS2PH10HE3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 2A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-220AA

库存3,472

100V

2A

800mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

1µA @ 100V

65pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

1N5392S-T

Diodes Incorporated

DIODE GEN PURP 100V 1.5A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存3,408

100V

1.5A

1.1V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 100V

20pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

8TQ060

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 8A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 550µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存3,712

60V

8A

720mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

550µA @ 60V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

S4KW16KA-4

Semtech Corporation

DIODE GEN PURP 16KV 6A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 16000V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 16V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 4µA @ 16000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

封装: Module

库存7,696

16000V

6A

16V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

2µs

4µA @ 16000V

-

Chassis Mount

Module

-

-55°C ~ 150°C

R7001603XXUA

Powerex Inc.

DIODE GEN PURP 1.6KV 300A DO200

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9µs
Current - Reverse Leakage @ Vr: 50mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-200AA, A-PUK

库存6,384

1600V

300A

2.15V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

9µs

50mA @ 1600V

-

Chassis, Stud Mount

DO-200AA, A-PUK

DO-200AA, R62

-65°C ~ 200°C

R7011004XXUA

Powerex Inc.

DIODE GEN PURP 1KV 450A DO200

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 450A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11µs
Current - Reverse Leakage @ Vr: 50mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-200AA, A-PUK
Supplier Device Package: DO-200AA, R62
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-200AA, A-PUK

库存5,952

1000V

450A

1.6V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

11µs

50mA @ 1000V

-

Chassis, Stud Mount

DO-200AA, A-PUK

DO-200AA, R62

-65°C ~ 175°C

JANTXV1N5804

Microsemi Corporation

DIODE GEN PURP 100V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 1µA @ 100V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: -
Operating Temperature - Junction: -65°C ~ 175°C

封装: A, Axial

库存7,056

100V

1A

875mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

1µA @ 100V

25pF @ 10V, 1MHz

Through Hole

A, Axial

-

-65°C ~ 175°C

RJS6004TDPP-EJ#T2

Renesas Electronics America

DIODE SCHOTTKY 600V 10A TO220FP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-3 Full Pack

库存5,152

600V

10A (DC)

1.8V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

15ns

10µA @ 600V

-

Surface Mount

TO-220-3 Full Pack

TO-220FP

-55°C ~ 150°C

1N5807

Semtech Corporation

D MET 6A SFST 50V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存6,256

-

LSM145 MELF

Microsemi Corporation

DIODE SCHOTTKY 45V 1A DO213AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-213AB, MELF (Glass)

库存7,440

45V

1A

580mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

-

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 150°C

MB3045S-E3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 30A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,792

45V

30A

700mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

RB168LAM100TR

Rohm Semiconductor

DIODE SCHOTTKY 100V 1A PMDTM

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400nA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 150°C (Max)

封装: SOD-128

库存2,864

100V

1A

810mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

400nA @ 100V

-

Surface Mount

SOD-128

PMDTM

150°C (Max)

JANTX1N5615

Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 500nA @ 200V
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 175°C

封装: A, Axial

库存30,390

200V

1A

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

500nA @ 200V

45pF @ 12V, 1MHz

Through Hole

A, Axial

A-PAK

-65°C ~ 175°C

MBRD1045TR

SMC Diode Solutions

DIODE SCHOTTKY 45V DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 700mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 45V
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,408

45V

-

700mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 45V

400pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

-55°C ~ 150°C

BAS20,215

Nexperia USA Inc.

DIODE GEN PURP 150V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 150V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Operating Temperature - Junction: 150°C (Max)

封装: TO-236-3, SC-59, SOT-23-3

库存118,476

150V

200mA (DC)

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 150V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB (SOT23)

150°C (Max)

STPS1150A

STMicroelectronics

DIODE SCHOTTKY 150V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 820mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: 175°C (Max)

封装: DO-214AC, SMA

库存1,133,280

150V

1A

820mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1µA @ 150V

-

Surface Mount

DO-214AC, SMA

SMA

175°C (Max)

CDBB140-HF

Comchip Technology

DIODE SCHOTTKY 40V 1A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 175°C

封装: DO-214AA, SMB

库存173,100

40V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

120pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-50°C ~ 175°C

CMS11(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 2A MFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 95pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

封装: SOD-128

库存180,000

40V

2A

550mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

95pF @ 10V, 1MHz

Surface Mount

SOD-128

M-FLAT (2.4x3.8)

-40°C ~ 150°C

SB3H100L-5700E3-72

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

DSC04C065D1-13

Diodes Incorporated

SILICON CARBIDE RECTIFIER TO252

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Capacitance @ Vr, F: 150pF @ 100mV, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

650 V

4A

1.7 V @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

-

170 µA @ 650 V

150pF @ 100mV, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (Type WX)

-55°C ~ 175°C

QR806F_T0_00001

Panjit International Inc.

DIODE GEN PURP 600V 8A ITO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

600 V

8A

1.65 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

3 µA @ 600 V

-

Through Hole

TO-220-2 Full Pack, Isolated Tab

ITO-220AC

-55°C ~ 175°C

NXPLQSC106506Q

WeEn Semiconductors

DIODE SCHOTTKY 650V 10A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

封装: -

Request a Quote

650 V

10A

1.85 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

230 µA @ 650 V

250pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

175°C (Max)

TSDGLWHRVG

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A SOD123W

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存47,430

400 V

1A

-

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

15pF @ 4V, 1MHz

Surface Mount

SOD-123W

-55°C ~ 175°C

S504120

Microchip Technology

DIODE GP 1.2KV 300A DO205AB DO9

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

1200 V

300A

1.25 V @ 1000 A

Standard Recovery >500ns, > 200mA (Io)

-

75 µA @ 1200 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-205AB (DO-9)

-65°C ~ 200°C

SDURD1530

SMC Diode Solutions

DIODE GEN PURP 300V 15A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

300 V

15A

1.26 V @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

10 µA @ 300 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

-55°C ~ 175°C

RS1GLH

Taiwan Semiconductor Corporation

150NS, 0.8A, 400V, FAST RECOVERY

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

1A

1.3 V @ 800 mA

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 400 V

10pF @ 4V, 1MHz

Surface Mount

SOD-123

Sub SMA

-55°C ~ 150°C

MMSD914T1

onsemi

DIODE SWITCH 100V SOD123

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -

封装: -

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100 V

200mA

1 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

5 µA @ 75 V

4pF @ 0V, 1MHz

Surface Mount

SOD-123

-

BX320_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 200V 3A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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200 V

3A

900 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 200 V

-

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-65°C ~ 175°C

CGRAT105L-HF

Comchip Technology

DIODE GEN PURP 1KV 1A 2010

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2010/DO-214AC
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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1000 V

1A

930 mV @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1000 V

8.2pF @ 4V, 1MHz

Surface Mount

2-SMD, No Lead

2010/DO-214AC

-65°C ~ 175°C