页 1678 - 二极管 - 整流器 - 单 | 分立半导体产品 | 深圳黑森尔电子
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二极管 - 整流器 - 单

记录 52,788
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制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CRSH2-5 TR
Central Semiconductor Corp

DIODE SCHOTTKY DO15

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: 170pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -65°C ~ 125°C
封装: DO-204AC, DO-15, Axial
库存7,456
50V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
170pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-65°C ~ 125°C
RGP10BE-M3/73
Vishay Semiconductor Diodes Division

DIODE SW 1A 100V 150NS DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-204AL, DO-41, Axial
库存5,600
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
VS-60CPF04PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 60A TO247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 180ns
  • Current - Reverse Leakage @ Vr: 100µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-247-3
库存7,792
400V
60A
1.3V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
100µA @ 400V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
SDM30004
Microsemi Corporation

DIODE MODULE 400V 300A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
封装: Module
库存5,152
400V
300A
1.1V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
75µA @ 400V
-
Chassis Mount
Module
Module
-
BY459-1500,127
NXP

DIODE GEN PURP 1.5KV 12A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1500V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 350ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
封装: TO-220-2
库存6,000
1500V
12A (DC)
1.3V @ 6.5A
Fast Recovery =< 500ns, > 200mA (Io)
350ns
-
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
FFH15S60STU
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 15A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.6V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-247-2
库存3,280
600V
15A
2.6V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
100µA @ 600V
-
Through Hole
TO-247-2
TO-247-2
-65°C ~ 150°C
R7011205XXUA
Powerex Inc.

DIODE GEN PURP 1.2KV 550A DO200

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 550A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-200AA, A-PUK
库存4,992
1200V
550A
1.2V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
15µs
50mA @ 1200V
-
Chassis, Stud Mount
DO-200AA, A-PUK
DO-200AA, R62
-65°C ~ 150°C
VS-SD403C08S10C
Vishay Semiconductor Diodes Division

DIODE MODULE 800V 430A D200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 430A
  • Voltage - Forward (Vf) (Max) @ If: 1.83V @ 1350A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1µs
  • Current - Reverse Leakage @ Vr: 35mA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, PUK
  • Operating Temperature - Junction: -
封装: DO-200AA, A-PUK
库存4,512
800V
430A
1.83V @ 1350A
Standard Recovery >500ns, > 200mA (Io)
1µs
35mA @ 800V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, PUK
-
hot DSEP60-04A
IXYS

DIODE GEN PURP 400V 60A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 650µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 (HA)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-247-2
库存104,136
400V
60A
1.5V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
650µA @ 400V
-
Through Hole
TO-247-2
TO-247 (HA)
-55°C ~ 175°C
hot FMXK-1086S
Sanken

DIODE GEN PURP 600V 8A TO220F-2L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 27ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-220-2 Full Pack
库存2,000
600V
8A
1.75V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
27ns
30µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-40°C ~ 150°C
AU3PG-M3/87A
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.7A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存6,784
400V
1.7A (DC)
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
hot SS5P5-M3/86A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 5A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 690mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 50V
  • Capacitance @ Vr, F: 200pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存557,160
50V
5A
690mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 50V
200pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
SR503HA0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: DO-201AD, Axial
库存3,280
30V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SJPB-L6V
Sanken

DIODE SCHOTTKY 60V 3A SJP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, J-Lead
  • Supplier Device Package: 2-SMD
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: 2-SMD, J-Lead
库存4,544
60V
3A
700mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 60V
-
Surface Mount
2-SMD, J-Lead
2-SMD
-40°C ~ 150°C
SS33-M3/57T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 30V DO-214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: DO-214AB, SMC
库存5,984
30V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 125°C
SRT115 A1G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: T-18, Axial
库存4,560
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
UH1PD-M3/85A
Vishay Semiconductor Diodes Division

DIODE 1A 200V 25NS SMD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-220AA
库存7,120
200V
1A
1.05V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
1µA @ 200V
16pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
1N4007-E3/53
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: DO-204AL, DO-41, Axial
库存2,576
1000V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-50°C ~ 150°C
12TQ150
SMC Diode Solutions

DIODE SCHOTTKY 150V 15A TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 860mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 150V
  • Capacitance @ Vr, F: 500pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-220-2
库存6,848
150V
15A
860mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 150V
500pF @ 5V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 175°C
hot STTH1L06
STMicroelectronics

DIODE GEN PURP 600V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 1µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: 175°C (Max)
封装: DO-204AL, DO-41, Axial
库存96,900
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
1µA @ 600V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
175°C (Max)
BAS16WS-E3-08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 250MA SOD323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 6ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: 150°C (Max)
封装: SC-76, SOD-323
库存205,062
75V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
6ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
150°C (Max)
SK56AQ-LTP
Micro Commercial Co

SCHOTTKY BARRIER RECTIFIERS 60V

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: 215pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存30,000
60 V
5A
700 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
215pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
1N6779
Microchip Technology

DIODE GEN PURP 600V 15A TO257

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 480 V
  • Capacitance @ Vr, F: 300pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-257-3
  • Supplier Device Package: TO-257
  • Operating Temperature - Junction: 150°C (Max)
封装: -
Request a Quote
600 V
15A
1.6 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
10 µA @ 480 V
300pF @ 5V, 1MHz
Through Hole
TO-257-3
TO-257
150°C (Max)
SF13G-TP
Micro Commercial Co

DIODE GEN PURP 150V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
150 V
1A
950 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 150 V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
JAN1N5814R
Microchip Technology

DIODE GEN PURP 100V 20A DO203AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 300pF @ 10V, 1MHz
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
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100 V
20A
950 mV @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 100 V
300pF @ 10V, 1MHz
Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 175°C
1SS385-LF-CT
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 10V 100MA SSM

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 µA @ 10 V
  • Capacitance @ Vr, F: 20pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
  • Operating Temperature - Junction: 125°C (Max)
封装: -
库存14,925
10 V
100mA
500 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
20 µA @ 10 V
20pF @ 0V, 1MHz
Surface Mount
SC-75, SOT-416
SSM
125°C (Max)
SS26T3
onsemi

DIODE SCHOTTKY POWER 2A 60V SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -
封装: -
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60 V
2A
630 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 60 V
-
Surface Mount
DO-214AA, SMB
SMB
-
CMS17-TE12L-Q-M
Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A M-FLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 90pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: M-FLAT (2.4x3.8)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
库存9,000
30 V
2A
480 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
90pF @ 10V, 1MHz
Surface Mount
SOD-128
M-FLAT (2.4x3.8)
-40°C ~ 150°C
MUR4L20H
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存7,500
200 V
4A
890 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
5 µA @ 200 V
65pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
CDLL5818E3-TR
Microchip Technology

DIODE SCHOTTKY 30V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 30 V
  • Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB (MELF, LL41)
  • Operating Temperature - Junction: -
封装: -
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30 V
1A
600 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 30 V
0.9pF @ 5V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB (MELF, LL41)
-