页 155 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
GI824-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 5A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 300pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	封装: P600, Axial	库存3,136	400V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	10µA @ 400V	300pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
MRA4003T3	ON Semiconductor	DIODE GEN PURP 300V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-214AC, SMA	库存628,284	300V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 300V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 175°C
S2HVM7.5	Semtech Corporation	DIODE GEN PURP 7.5KV 2A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 7500V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 8.8V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 1mA @ 7500V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: Module Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 150°C	封装: Module	库存4,944	7500V	2A	8.8V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	2.5µs	1mA @ 7500V	-	Chassis, Stud Mount	Module	-	-55°C ~ 150°C
VS-VSKE91/10	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 100A ADDAPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: ADD-A-PAK (3) Supplier Device Package: ADD-A-PAK? Operating Temperature - Junction: -40°C ~ 150°C	封装: ADD-A-PAK (3)	库存7,056	1000V	100A	-	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 1000V	-	Chassis Mount	ADD-A-PAK (3)	ADD-A-PAK?	-40°C ~ 150°C
SBRT4U60LP-7	Diodes Incorporated	DIODE SBR 60V 4A U-DFN3030-8 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 520mV @ 4A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 60V Capacitance @ Vr, F: 180pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8 Operating Temperature - Junction: -55°C ~ 175°C	封装: 8-PowerUDFN	库存2,688	60V	4A	520mV @ 4A	Standard Recovery >500ns, > 200mA (Io)	-	150µA @ 60V	180pF @ 5V, 1MHz	Surface Mount	8-PowerUDFN	U-DFN3030-8	-55°C ~ 175°C
BYG20G-M3/TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存21,600	400V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 400V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS115LHRHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存4,496	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
UF27520070A1.T	SMC Diode Solutions	DIODE AVALANCHE 200V 90A DIE Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 90A Voltage - Forward (Vf) (Max) @ If: 1V @ 90A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70ns Current - Reverse Leakage @ Vr: 60µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: 150°C (Max)	封装: Die	库存6,192	200V	90A	1V @ 90A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	60µA @ 200V	-	Surface Mount	Die	Die	150°C (Max)
RF05VAM1STR	Rohm Semiconductor	DIODE SUP FAST 100V 500MA TUMD2M Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 980mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C (Max)	封装: 2-SMD, Flat Lead	库存6,608	100V	500mA	980mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 100V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C (Max)
VS-ETH1506FP-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.45V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 29ns Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220-2 Full Pack Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-220-2 Full Pack	库存19,104	600V	15A	2.45V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	29ns	15µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220-2 Full Pack	-65°C ~ 175°C
STPSC2H12D	STMicroelectronics	DIODE SCHOTTKY 1.2KV 2A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 12µA @ 1200V Capacitance @ Vr, F: 190pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	封装: TO-220-2	库存34,572	1200V	2A	1.5V @ 2A	No Recovery Time > 500mA (Io)	0ns	12µA @ 1200V	190pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
DSEI30-12A	IXYS	DIODE GEN PURP 1.2KV 26A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 26A Voltage - Forward (Vf) (Max) @ If: 2.55V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 750µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-247-2	库存19,800	1200V	26A	2.55V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	750µA @ 1200V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
B380-13-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 80 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	80 V	3A	790 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 80 V	100pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 125°C
NTE5889	NTE Electronics, Inc	DIODE GEN PURP 1.2KV 30A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	1200 V	30A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	1 mA @ 1200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-40°C ~ 175°C
UT4005	Microchip Technology	DIODE GEN PURP 50V 4A B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: B Operating Temperature - Junction: -195°C ~ 175°C	封装: -	Request a Quote	50 V	4A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 50 V	-	Through Hole	Axial	B	-195°C ~ 175°C
CTLSH5-40M833S-TR	Central Semiconductor Corp	DIODE SCHOTTKY 40V 5A TLM833S Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: 220pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: TLM833S Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	40 V	5A	520 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	200 µA @ 40 V	220pF @ 4V, 1MHz	Surface Mount	8-PowerVDFN	TLM833S	-65°C ~ 150°C
S3210	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SS24T3	onsemi	DIODE SCHOTTKY POWER 2A 40V SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -	封装: -	Request a Quote	40 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	400 µA @ 40 V	-	Surface Mount	DO-214AA, SMB	SMB	-
FR107-AP	Micro Commercial Co	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
PCDP2065GC_T0_00601	Panjit International Inc.	650V SIC SCHOTTKY BARRIER DIODE Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 529pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存6,000	650 V	20A	1.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 650 V	529pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
HSM2836C-JTL-E	Renesas Electronics Corporation	DIODE FOR HIGH SPEED SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTX1N6623U-TR	Microchip Technology	DIODE GP 800V 1.5A A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 500 nA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	800 V	1.5A	1.8 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 800 V	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 175°C
SE12DLJHM3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 3.7A TO263AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3.7A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 96pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Supplier Device Package: TO-263AC (SMPD) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	600 V	3.7A	1 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 600 V	96pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), Variant	TO-263AC (SMPD)	-55°C ~ 175°C
1N1202B	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	200 V	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
RB088RSM15STL1	Rohm Semiconductor	150V 10A, TO-277GE, ULTRA LOW IR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 175°C	封装: -	库存11,925	150 V	10A	880 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5 µA @ 150 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	175°C
MSASC100H45H	Microchip Technology	DIODE SCHOTTKY 45V 100A THINKEY1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™1 Supplier Device Package: ThinKey™1 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	45 V	100A	650 mV @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	ThinKey™1	ThinKey™1	-65°C ~ 150°C
TRS12E65F-S1Q	Toshiba Semiconductor and Storage	DIODE SIL CARB 650V 12A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 90 µA @ 650 V Capacitance @ Vr, F: 65pF @ 650V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C (Max)	封装: -	库存9	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	65pF @ 650V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C (Max)
PCDD10120G1_L2_00001	Panjit International Inc.	DIODE SIL CARB 1.2KV 10A TO252AA Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: 529pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存17,970	1200 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	529pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
DSEP6-06AS-TUB	IXYS	DIODE GEN PURP 600V 6A TO252AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.03 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: 5pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	600 V	6A	2.03 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	50 µA @ 600 V	5pF @ 400V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
JANTXV1N3174R	Microchip Technology	DIODE GEN PURP 300A DO205AB DO9 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	-	300A	1.55 V @ 940 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 1000 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C

GI824-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 5A P600

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 300pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: P600, Axial
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C

封装: P600, Axial

库存3,136

400V

5A

1.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

10µA @ 400V

300pF @ 4V, 1MHz

Through Hole

P600, Axial

P600

-50°C ~ 150°C

MRA4003T3

ON Semiconductor

DIODE GEN PURP 300V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-214AC, SMA

库存628,284

300V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 300V

-

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 175°C

S2HVM7.5

Semtech Corporation

DIODE GEN PURP 7.5KV 2A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 7500V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 8.8V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5µs
Current - Reverse Leakage @ Vr: 1mA @ 7500V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: Module
Supplier Device Package: -
Operating Temperature - Junction: -55°C ~ 150°C

封装: Module

库存4,944

7500V

2A

8.8V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

2.5µs

1mA @ 7500V

-

Chassis, Stud Mount

Module

-

-55°C ~ 150°C

VS-VSKE91/10

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 100A ADDAPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: ADD-A-PAK (3)
Supplier Device Package: ADD-A-PAK?
Operating Temperature - Junction: -40°C ~ 150°C

封装: ADD-A-PAK (3)

库存7,056

1000V

100A

-

Standard Recovery >500ns, > 200mA (Io)

-

10mA @ 1000V

-

Chassis Mount

ADD-A-PAK (3)

ADD-A-PAK?

-40°C ~ 150°C

SBRT4U60LP-7

Diodes Incorporated

DIODE SBR 60V 4A U-DFN3030-8

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 4A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 60V
Capacitance @ Vr, F: 180pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -55°C ~ 175°C

封装: 8-PowerUDFN

库存2,688

60V

4A

520mV @ 4A

Standard Recovery >500ns, > 200mA (Io)

-

150µA @ 60V

180pF @ 5V, 1MHz

Surface Mount

8-PowerUDFN

U-DFN3030-8

-55°C ~ 175°C

BYG20G-M3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.5A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存21,600

400V

1.5A

1.4V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

1µA @ 400V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

SS115LHRHG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存4,496

150V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 150V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

UF27520070A1.T

SMC Diode Solutions

DIODE AVALANCHE 200V 90A DIE

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 90A
Voltage - Forward (Vf) (Max) @ If: 1V @ 90A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 60µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: 150°C (Max)

封装: Die

库存6,192

200V

90A

1V @ 90A

Fast Recovery =< 500ns, > 200mA (Io)

70ns

60µA @ 200V

-

Surface Mount

Die

150°C (Max)

RF05VAM1STR

Rohm Semiconductor

DIODE SUP FAST 100V 500MA TUMD2M

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 980mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C (Max)

封装: 2-SMD, Flat Lead

库存6,608

100V

500mA

980mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

25ns

10µA @ 100V

-

Surface Mount

2-SMD, Flat Lead

TUMD2M

150°C (Max)

VS-ETH1506FP-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220FP

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.45V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-220-2 Full Pack

库存19,104

600V

15A

2.45V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

29ns

15µA @ 600V

-

Through Hole

TO-220-2 Full Pack

-65°C ~ 175°C

STPSC2H12D

STMicroelectronics

DIODE SCHOTTKY 1.2KV 2A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 12µA @ 1200V
Capacitance @ Vr, F: 190pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C

封装: TO-220-2

库存34,572

1200V

2A

1.5V @ 2A

No Recovery Time > 500mA (Io)

0ns

12µA @ 1200V

190pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC

-40°C ~ 175°C

DSEI30-12A

IXYS

DIODE GEN PURP 1.2KV 26A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 26A
Voltage - Forward (Vf) (Max) @ If: 2.55V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 750µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-247-2

库存19,800

1200V

26A

2.55V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

750µA @ 1200V

-

Through Hole

TO-247-2

TO-247AD

-40°C ~ 150°C

B380-13-F-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 80 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

80 V

3A

790 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 80 V

100pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 125°C

NTE5889

NTE Electronics, Inc

DIODE GEN PURP 1.2KV 30A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

1200 V

30A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

1 mA @ 1200 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-40°C ~ 175°C

UT4005

Microchip Technology

DIODE GEN PURP 50V 4A B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: B
Operating Temperature - Junction: -195°C ~ 175°C

封装: -

Request a Quote

50 V

4A

1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 50 V

-

Through Hole

Axial

B

-195°C ~ 175°C

CTLSH5-40M833S-TR

Central Semiconductor Corp

DIODE SCHOTTKY 40V 5A TLM833S

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: TLM833S
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

40 V

5A

520 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

80 ns

200 µA @ 40 V

220pF @ 4V, 1MHz

Surface Mount

8-PowerVDFN

TLM833S

-65°C ~ 150°C

S3210

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

SS24T3

onsemi

DIODE SCHOTTKY POWER 2A 40V SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -

封装: -

Request a Quote

40 V

2A

500 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

400 µA @ 40 V

-

Surface Mount

DO-214AA, SMB

SMB

-

FR107-AP

Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

1000 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

500 ns

5 µA @ 1000 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

PCDP2065GC_T0_00601

Panjit International Inc.

650V SIC SCHOTTKY BARRIER DIODE

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Capacitance @ Vr, F: 529pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存6,000

650 V

20A

1.8 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 650 V

529pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

HSM2836C-JTL-E

Renesas Electronics Corporation

DIODE FOR HIGH SPEED SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

JANTX1N6623U-TR

Microchip Technology

DIODE GP 800V 1.5A A SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

800 V

1.5A

1.8 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

500 nA @ 800 V

-

Surface Mount

SQ-MELF, A

A, SQ-MELF

-65°C ~ 175°C

SE12DLJHM3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3.7A TO263AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 3.7A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 96pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

600 V

3.7A

1 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

300 ns

5 µA @ 600 V

96pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), Variant

TO-263AC (SMPD)

-55°C ~ 175°C

1N1202B

Microchip Technology

STANDARD RECTIFIER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

200 V

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

RB088RSM15STL1

Rohm Semiconductor

150V 10A, TO-277GE, ULTRA LOW IR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A
Operating Temperature - Junction: 175°C

封装: -

库存11,925

150 V

10A

880 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

4.5 µA @ 150 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A

175°C

MSASC100H45H

Microchip Technology

DIODE SCHOTTKY 45V 100A THINKEY1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 80 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™1
Supplier Device Package: ThinKey™1
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

45 V

100A

650 mV @ 80 A

Fast Recovery =< 500ns, > 200mA (Io)

-

Surface Mount

ThinKey™1

-65°C ~ 150°C

TRS12E65F-S1Q

Toshiba Semiconductor and Storage

DIODE SIL CARB 650V 12A TO220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Capacitance @ Vr, F: 65pF @ 650V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C (Max)

封装: -

库存9

650 V

12A

1.7 V @ 12 A

No Recovery Time > 500mA (Io)

0 ns

90 µA @ 650 V

65pF @ 650V, 1MHz

Through Hole

TO-220-2

TO-220-2L

175°C (Max)

PCDD10120G1_L2_00001

Panjit International Inc.

DIODE SIL CARB 1.2KV 10A TO252AA

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Capacitance @ Vr, F: 529pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存17,970

1200 V

10A

1.7 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

100 µA @ 1200 V

529pF @ 1V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

DSEP6-06AS-TUB

IXYS

DIODE GEN PURP 600V 6A TO252AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 2.03 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: 5pF @ 400V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

600 V

6A

2.03 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

50 µA @ 600 V

5pF @ 400V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

JANTXV1N3174R

Microchip Technology

DIODE GEN PURP 300A DO205AB DO9

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

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-

300A

1.55 V @ 940 A

Standard Recovery >500ns, > 200mA (Io)

-

10 mA @ 1000 V

-

Stud Mount

DO-205AB, DO-9, Stud

DO-205AB (DO-9)

-65°C ~ 200°C