页 147 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SBLF1030HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 10A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -40°C ~ 125°C	封装: TO-220-3 Full Pack, Isolated Tab	库存7,520	30V	10A	600mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-40°C ~ 125°C
BY229B-400HE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,296	400V	8A	1.85V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	145ns	10µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-40°C ~ 150°C
VS-90SQ030	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 9A DO204AR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AR, Axial Supplier Device Package: DO-204AR Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AR, Axial	库存4,752	30V	9A	480mV @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 30V	-	Through Hole	DO-204AR, Axial	DO-204AR	-55°C ~ 150°C
12TQ045	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 15A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 45V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2	库存9,588	45V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 45V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
1N4596	Powerex Inc.	DIODE GEN PURP 1.4KV 150A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3.5mA @ 1400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	封装: DO-205AA, DO-8, Stud	库存7,488	1400V	150A	-	Standard Recovery >500ns, > 200mA (Io)	-	3.5mA @ 1400V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-60°C ~ 200°C
JANTXV1N6629US	Microsemi Corporation	DIODE GEN PURP 800V 1.4A D5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 2µA @ 800V Capacitance @ Vr, F: 40pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C	封装: SQ-MELF, E	库存3,696	800V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	2µA @ 800V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
DNA30EM2200PC	IXYS	DIODE GEN PURP 2.2KV 30A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 2200V Capacitance @ Vr, F: 7pF @ 700V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,664	2200V	30A	1.26V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 2200V	7pF @ 700V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 175°C
CMR3U-02 BK	Central Semiconductor Corp	DIODE GEN PURP 200V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-214AB, SMC	库存5,744	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C
NRVTS12120MFST1G	ON Semiconductor	DIODE SCHOTTKY 120V 12A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 830mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C	封装: 8-PowerTDFN, 5 Leads	库存4,640	120V	12A	830mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	75µA @ 120V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 150°C
UPS130LE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 30V POWERMITE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存2,576	-	-	-	-	-	-	-	-	-	-	-
BYT51K-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 1.5A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	封装: SOD-57, Axial	库存7,776	800V	1.5A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 800V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
BY520-14E-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.4KV 500MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存2,416	1400V	500mA	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SA2B-M3/5AT	Vishay Semiconductor Diodes Division	DIODE GPP 2A 100V DO-214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 3µA @ 1000V Capacitance @ Vr, F: 11pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存2,064	100V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	3µA @ 1000V	11pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
DB2U31600L	Panasonic Electronic Components	DIODE SCHOTTKY 30V 100MA SOD923 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 800ps Current - Reverse Leakage @ Vr: 15µA @ 30V Capacitance @ Vr, F: 2pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923 Operating Temperature - Junction: 125°C (Max)	封装: SOD-923	库存5,872	30V	100mA	550mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	800ps	15µA @ 30V	2pF @ 10V, 1MHz	Surface Mount	SOD-923	SOD-923	125°C (Max)
1N4934GHB0G	TSC America Inc.	DIODE, FAST, 1A, 100V, 200NS, AE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存6,432	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1JLHRFG	TSC America Inc.	DIODE, 1A, 600V, AEC-Q101, SUB S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-219AB	库存3,568	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
SR106HR0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存4,336	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GP2D010A060A	Global Power Technologies Group	SCHOTTKY DIODE 600V 10A TO-220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 40µA @ 600V Capacitance @ Vr, F: 527pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -50°C ~ 175°C	封装: TO-220-2	库存6,216	600V	30A (DC)	1.65V @ 10A	No Recovery Time > 500mA (Io)	0ns	40µA @ 600V	527pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-50°C ~ 175°C
AU02V1	Sanken	DIODE GEN PURP 400V 800MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存5,136	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 400V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
RHRD660S9A_F085	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 6A TO252-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存23,322	600V	6A	2.1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	100µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
PCFFS40120AF	onsemi	DIODE SIL CARBIDE 1.2KV 61A DIE Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 61A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Capacitance @ Vr, F: 2250pf @ 1V, 100kHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1200 V	61A	1.75 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	2250pf @ 1V, 100kHz	Surface Mount	Die	Die	-55°C ~ 175°C
GP3D010A065B	SemiQ	DIODE SIL CARB 650V 10A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 25 µA @ 650 V Capacitance @ Vr, F: 419pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 650 V	419pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
PU2BLS	Taiwan Semiconductor Corporation	25NS, 2A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 31pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存60,000	100 V	2A	930 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 100 V	31pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C
ER3D-TP-HF	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 175°C	封装: -	Request a Quote	200 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 175°C
FR103T-R	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 200 V	50pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
U1B-M3-5AT	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 6.8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	1A	920 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	15 ns	5 µA @ 100 V	6.8pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N1613RA	Solid State Inc.	DIODE GEN PURP REV 100V 16A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	100 V	16A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 100 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
BYV29B-600PJ	WeEn Semiconductors	DIODE GEN PURP 600V 9A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max)	封装: -	Request a Quote	600 V	9A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	175°C (Max)
SK82C-V6G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	20 V	8A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 125°C
PMEG100T30ELPX	Nexperia USA Inc.	DIODE SCHOTT 100V 3A SOD128/CFP5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 12.5 ns Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C	封装: -	库存30,450	100 V	3A	800 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	12.5 ns	1.75 µA @ 100 V	300pF @ 1V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	175°C

SBLF1030HE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 10A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 125°C

封装: TO-220-3 Full Pack, Isolated Tab

库存7,520

30V

10A

600mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-40°C ~ 125°C

BY229B-400HE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,296

400V

8A

1.85V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

145ns

10µA @ 400V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-40°C ~ 150°C

VS-90SQ030

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 9A DO204AR

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.75mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AR, Axial
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AR, Axial

库存4,752

30V

9A

480mV @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.75mA @ 30V

-

Through Hole

DO-204AR, Axial

DO-204AR

-55°C ~ 150°C

12TQ045

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 15A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.75mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2

库存9,588

45V

15A

560mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.75mA @ 45V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

1N4596

Powerex Inc.

DIODE GEN PURP 1.4KV 150A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3.5mA @ 1400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C

封装: DO-205AA, DO-8, Stud

库存7,488

1400V

150A

-

Standard Recovery >500ns, > 200mA (Io)

-

3.5mA @ 1400V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-60°C ~ 200°C

JANTXV1N6629US

Microsemi Corporation

DIODE GEN PURP 800V 1.4A D5B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 2µA @ 800V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C

封装: SQ-MELF, E

库存3,696

800V

1.4A

1.4V @ 1.4A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

2µA @ 800V

40pF @ 10V, 1MHz

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 150°C

DNA30EM2200PC

IXYS

DIODE GEN PURP 2.2KV 30A TO263

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 2200V
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,664

2200V

30A

1.26V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

40µA @ 2200V

7pF @ 700V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-55°C ~ 175°C

CMR3U-02 BK

Central Semiconductor Corp

DIODE GEN PURP 200V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214AB, SMC

库存5,744

200V

3A

1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 175°C

NRVTS12120MFST1G

ON Semiconductor

DIODE SCHOTTKY 120V 12A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 830mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 75µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C

封装: 8-PowerTDFN, 5 Leads

库存4,640

120V

12A

830mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

75µA @ 120V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 150°C

UPS130LE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 1A 30V POWERMITE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存2,576

-

BYT51K-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.5A SOD57

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C

封装: SOD-57, Axial

库存7,776

800V

1.5A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 800V

-

Through Hole

SOD-57, Axial

SOD-57

-55°C ~ 175°C

BY520-14E-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.4KV 500MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存2,416

1400V

500mA

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

SA2B-M3/5AT

Vishay Semiconductor Diodes Division

DIODE GPP 2A 100V DO-214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 3µA @ 1000V
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存2,064

100V

2A

1.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

3µA @ 1000V

11pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

DB2U31600L

Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA SOD923

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 800ps
Current - Reverse Leakage @ Vr: 15µA @ 30V
Capacitance @ Vr, F: 2pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923
Operating Temperature - Junction: 125°C (Max)

封装: SOD-923

库存5,872

30V

100mA

550mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

800ps

15µA @ 30V

2pF @ 10V, 1MHz

Surface Mount

SOD-923

125°C (Max)

1N4934GHB0G

TSC America Inc.

DIODE, FAST, 1A, 100V, 200NS, AE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存6,432

100V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 100V

10pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

S1JLHRFG

TSC America Inc.

DIODE, 1A, 600V, AEC-Q101, SUB S

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-219AB

库存3,568

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 600V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

SR106HR0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 6

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存4,336

60V

1A

700mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 60V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

GP2D010A060A

Global Power Technologies Group

SCHOTTKY DIODE 600V 10A TO-220-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 40µA @ 600V
Capacitance @ Vr, F: 527pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -50°C ~ 175°C

封装: TO-220-2

库存6,216

600V

30A (DC)

1.65V @ 10A

No Recovery Time > 500mA (Io)

0ns

40µA @ 600V

527pF @ 1V, 1MHz

Through Hole

TO-220-2

-50°C ~ 175°C

AU02V1

Sanken

DIODE GEN PURP 400V 800MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存5,136

400V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 400V

-

Through Hole

Axial

-40°C ~ 150°C

RHRD660S9A_F085

Fairchild/ON Semiconductor

DIODE GEN PURP 600V 6A TO252-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存23,322

600V

6A

2.1V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

100µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252AA

-55°C ~ 175°C

PCFFS40120AF

onsemi

DIODE SIL CARBIDE 1.2KV 61A DIE

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 61A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Capacitance @ Vr, F: 2250pf @ 1V, 100kHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1200 V

61A

1.75 V @ 40 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 1200 V

2250pf @ 1V, 100kHz

Surface Mount

Die

-55°C ~ 175°C

GP3D010A065B

SemiQ

DIODE SIL CARB 650V 10A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Capacitance @ Vr, F: 419pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

650 V

10A

1.6 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

25 µA @ 650 V

419pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

PU2BLS

Taiwan Semiconductor Corporation

25NS, 2A, 200V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存60,000

100 V

2A

930 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 100 V

31pF @ 4V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 175°C

ER3D-TP-HF

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -50°C ~ 175°C

封装: -

Request a Quote

200 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-50°C ~ 175°C

FR103T-R

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 200V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

200 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 200 V

50pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

U1B-M3-5AT

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 6.8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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100 V

1A

920 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

15 ns

5 µA @ 100 V

6.8pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N1613RA

Solid State Inc.

DIODE GEN PURP REV 100V 16A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

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100 V

16A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 100 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

BYV29B-600PJ

WeEn Semiconductors

DIODE GEN PURP 600V 9A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 9A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)

封装: -

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600 V

9A

1.3 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

10 µA @ 600 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

175°C (Max)

SK82C-V6G

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 8A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

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20 V

8A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 20 V

-

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 125°C

PMEG100T30ELPX

Nexperia USA Inc.

DIODE SCHOTT 100V 3A SOD128/CFP5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.5 ns
Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C

封装: -

库存30,450

100 V

3A

800 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

12.5 ns

1.75 µA @ 100 V

300pF @ 1V, 1MHz

Surface Mount

SOD-128

SOD-128/CFP5

175°C