页 109 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IRD3CH53DB6	Infineon Technologies	DIODE GEN PURP 1.2KV 100A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 270ns Current - Reverse Leakage @ Vr: 2µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 150°C	封装: Die	库存5,472	1200V	100A	2.7V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	270ns	2µA @ 1200V	-	Surface Mount	Die	Die	-40°C ~ 150°C
MBRH30045RL	GeneSiC Semiconductor	DIODE SCHOTTKY 45V 300A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 45V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	封装: D-67	库存4,448	45V	300A	600mV @ 300A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 45V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
GI250-2HE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 2KV 250MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 2000V Capacitance @ Vr, F: 3pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存3,568	2000V	250mA	3.5V @ 250mA	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 2000V	3pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
30EPF10	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 30A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 450ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-247-2	库存4,624	1000V	30A	1.41V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	450ns	100µA @ 1000V	-	Through Hole	TO-247-2	TO-247AC Modified	-40°C ~ 150°C
S1KB-13	Diodes Incorporated	DIODE GEN PURP 800V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AA, SMB	库存4,880	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
A187RPD	Powerex Inc.	DIODE GEN PURP REV 1.4KV DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.3µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 125°C	封装: DO-205AA, DO-8, Stud	库存3,568	1400V	150A	-	Standard Recovery >500ns, > 200mA (Io)	2.3µs	-	-	Stud Mount	DO-205AA, DO-8, Stud	-	-40°C ~ 125°C
1N4592	Powerex Inc.	DIODE GEN PURP 600V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6.5mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -60°C ~ 200°C	封装: DO-205AA, DO-8, Stud	库存7,024	600V	150A	-	Standard Recovery >500ns, > 200mA (Io)	-	6.5mA @ 600V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-60°C ~ 200°C
SFA1008GHC0G	TSC America Inc.	DIODE, SUPER FAST, 10A, 600V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2	库存5,344	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
VS-MBRB745TRL-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 7.5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 570mV @ 7.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: 400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,376	45V	7.5A	570mV @ 7.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	400pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-65°C ~ 150°C
SF35G R0G	TSC America Inc.	DIODE, SUPER FAST, 3A, 300V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存7,776	300V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
V3PAL45-M3/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 3A 45V DO-221BC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 450µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -40°C ~ 150°C	封装: DO-221BC, SMA Flat Leads Exposed Pad	库存5,168	45V	3A	540mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	450µA @ 45V	-	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	DO-221BC (SMPA)	-40°C ~ 150°C
BYG20D-E3/TR3	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存714,000	200V	1.5A	1.4V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	1µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
1N5392GHR0G	TSC America Inc.	DIODE, 1.5A, 100V, AEC-Q101, DO- Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AC, DO-15, Axial	库存6,096	100V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SDT10A100CT	Diodes Incorporated	SCHOTTKY RECTIFIER TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-3	库存3,248	100V	5A	660mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
US2G-TP	Micro Commercial Co	DIODE GEN PURP 400V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -50°C ~ 150°C	封装: DO-214AA, SMB	库存27,108	400V	2A	1.4V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	28pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-50°C ~ 150°C
STPS1045SF	STMicroelectronics	DIODE SCHOTTKY 45V 10A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: 175°C (Max)	封装: -	库存17,055	45 V	10A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 45 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	175°C (Max)
JANTXV1N6762	Microchip Technology	DIODE GEN PURP 50V 12A TO254 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 300pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254 Operating Temperature - Junction: -	封装: -	Request a Quote	50 V	12A	1.05 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	300pF @ 5V, 1MHz	Through Hole	TO-254-3, TO-254AA	TO-254	-
PSDH30120S1_T0_00001	Panjit International Inc.	DIODE GP 1.2KV 30A TO247AD-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 250 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD-2 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存4,158	1200 V	30A	3.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	250 µA @ 1200 V	-	Through Hole	TO-247-2	TO-247AD-2	-55°C ~ 150°C
IDH12SG60CXKSA2	Infineon Technologies	DIODE SIL CARB 600V 12A TO220-1 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: 310pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存1,503	600 V	12A	2.1 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 600 V	310pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
PMEG3010EP-QX	Nexperia USA Inc.	DIODE SCHOTTKY 30V 1A SOD128 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V Capacitance @ Vr, F: 170pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 150°C	封装: -	库存17,970	30 V	1A	360 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 30 V	170pF @ 1V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	150°C
GB05MPS17-263	GeneSiC Semiconductor	DIODE SIL CARB 1.7KV 18A TO263-7 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 18A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 470pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1700 V	18A	-	No Recovery Time > 500mA (Io)	-	-	470pF @ 1V, 1MHz	Surface Mount	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	TO-263-7	-55°C ~ 175°C
CMR1-10-TR13-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 1KV 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -60°C ~ 175°C	封装: -	库存6,573	1000 V	1A	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 1000 V	-	Surface Mount	DO-214AA, SMB	SMB	-60°C ~ 175°C
MBRS140T3	onsemi	DIODE SCHOTTKY 40V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -	封装: -	Request a Quote	40 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	-	Surface Mount	DO-214AA, SMB	SMB	-
TST30L100CW	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 15A TO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存2,649	100 V	15A	820 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 100 V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
ES2DV	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存18,000	200 V	2A	900 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	5 µA @ 200 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SJPE-H3	Sanken Electric USA Inc.	SCHOTTKY BARRIER DIODE (SURFACE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CDLL645-TR	Microchip Technology	DIODE GP 225V 400MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 225 V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 nA @ 225 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	225 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	50 nA @ 225 V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
SBA0530Q-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 30V 500MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 520 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 2-DFN (1x0.6) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	30 V	500mA	520 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	-	Surface Mount	0402 (1006 Metric)	2-DFN (1x0.6)	-55°C ~ 150°C
PMEG120G20ELPJ	Nexperia USA Inc.	DIODE SIGE 120V 2A SOD128/CFP5 Diode Type: SiGe (Silicon Germanium) Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 11 ns Current - Reverse Leakage @ Vr: 30 nA @ 120 V Capacitance @ Vr, F: 75pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C (Max)	封装: -	Request a Quote	120 V	2A	840 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	11 ns	30 nA @ 120 V	75pF @ 1V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	175°C (Max)
FR505-TP	Micro Commercial Co	DIODE GEN PURP 600V 5A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	600 V	5A	1.35 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	10 µA @ 600 V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

IRD3CH53DB6

Infineon Technologies

DIODE GEN PURP 1.2KV 100A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270ns
Current - Reverse Leakage @ Vr: 2µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 150°C

封装: Die

库存5,472

1200V

100A

2.7V @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

270ns

2µA @ 1200V

-

Surface Mount

Die

-40°C ~ 150°C

MBRH30045RL

GeneSiC Semiconductor

DIODE SCHOTTKY 45V 300A D67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

封装: D-67

库存4,448

45V

300A

600mV @ 300A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 45V

-

Chassis Mount

D-67

-55°C ~ 150°C

GI250-2HE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2KV 250MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2000V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 2000V
Capacitance @ Vr, F: 3pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存3,568

2000V

250mA

3.5V @ 250mA

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 2000V

3pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

30EPF10

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 30A TO247AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-247-2

库存4,624

1000V

30A

1.41V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

450ns

100µA @ 1000V

-

Through Hole

TO-247-2

TO-247AC Modified

-40°C ~ 150°C

S1KB-13

Diodes Incorporated

DIODE GEN PURP 800V 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AA, SMB

库存4,880

800V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 800V

10pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

A187RPD

Powerex Inc.

DIODE GEN PURP REV 1.4KV DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1400V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.3µs
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 125°C

封装: DO-205AA, DO-8, Stud

库存3,568

1400V

150A

-

Standard Recovery >500ns, > 200mA (Io)

2.3µs

-

Stud Mount

DO-205AA, DO-8, Stud

-

-40°C ~ 125°C

1N4592

Powerex Inc.

DIODE GEN PURP 600V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 6.5mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -60°C ~ 200°C

封装: DO-205AA, DO-8, Stud

库存7,024

600V

150A

-

Standard Recovery >500ns, > 200mA (Io)

-

6.5mA @ 600V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-60°C ~ 200°C

SFA1008GHC0G

TSC America Inc.

DIODE, SUPER FAST, 10A, 600V, 35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2

库存5,344

600V

10A

1.7V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 600V

50pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

VS-MBRB745TRL-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 7.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,376

45V

7.5A

570mV @ 7.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 45V

400pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-65°C ~ 150°C

SF35G R0G

TSC America Inc.

DIODE, SUPER FAST, 3A, 300V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存7,776

300V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 300V

60pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

V3PAL45-M3/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 45V DO-221BC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 540mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 450µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C

封装: DO-221BC, SMA Flat Leads Exposed Pad

库存5,168

45V

3A

540mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

450µA @ 45V

-

Surface Mount

DO-221BC, SMA Flat Leads Exposed Pad

DO-221BC (SMPA)

-40°C ~ 150°C

BYG20D-E3/TR3

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 1µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存714,000

200V

1.5A

1.4V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

1µA @ 200V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

1N5392GHR0G

TSC America Inc.

DIODE, 1.5A, 100V, AEC-Q101, DO-

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AC, DO-15, Axial

库存6,096

100V

1.5A

1.1V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 100V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

SDT10A100CT

Diodes Incorporated

SCHOTTKY RECTIFIER TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-3

库存3,248

100V

5A

660mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 100V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

US2G-TP

Micro Commercial Co

DIODE GEN PURP 400V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -50°C ~ 150°C

封装: DO-214AA, SMB

库存27,108

400V

2A

1.4V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

28pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-50°C ~ 150°C

STPS1045SF

STMicroelectronics

DIODE SCHOTTKY 45V 10A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: 175°C (Max)

封装: -

库存17,055

45 V

10A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 45 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

175°C (Max)

JANTXV1N6762

Microchip Technology

DIODE GEN PURP 50V 12A TO254

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA
Supplier Device Package: TO-254
Operating Temperature - Junction: -

封装: -

Request a Quote

50 V

12A

1.05 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

300pF @ 5V, 1MHz

Through Hole

TO-254-3, TO-254AA

TO-254

-

PSDH30120S1_T0_00001

Panjit International Inc.

DIODE GP 1.2KV 30A TO247AD-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD-2
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存4,158

1200 V

30A

3.5 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

250 µA @ 1200 V

-

Through Hole

TO-247-2

TO-247AD-2

-55°C ~ 150°C

IDH12SG60CXKSA2

Infineon Technologies

DIODE SIL CARB 600V 12A TO220-1

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 12 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存1,503

600 V

12A

2.1 V @ 12 A

No Recovery Time > 500mA (Io)

0 ns

100 µA @ 600 V

310pF @ 1V, 1MHz

Through Hole

TO-220-2

PG-TO220-2-1

-55°C ~ 175°C

PMEG3010EP-QX

Nexperia USA Inc.

DIODE SCHOTTKY 30V 1A SOD128

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C

封装: -

库存17,970

30 V

1A

360 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5 mA @ 30 V

170pF @ 1V, 1MHz

Surface Mount

SOD-128

SOD-128/CFP5

150°C

GB05MPS17-263

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 18A TO263-7

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 18A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1700 V

18A

-

No Recovery Time > 500mA (Io)

-

470pF @ 1V, 1MHz

Surface Mount

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

TO-263-7

-55°C ~ 175°C

CMR1-10-TR13-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 1KV 1A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -60°C ~ 175°C

封装: -

库存6,573

1000 V

1A

1.1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 1000 V

-

Surface Mount

DO-214AA, SMB

SMB

-60°C ~ 175°C

MBRS140T3

onsemi

DIODE SCHOTTKY 40V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -

封装: -

Request a Quote

40 V

1A

600 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 40 V

-

Surface Mount

DO-214AA, SMB

SMB

-

TST30L100CW

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 15A TO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存2,649

100 V

15A

820 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 100 V

-

Through Hole

TO-220-3

TO-220AB

-55°C ~ 150°C

ES2DV

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存18,000

200 V

2A

900 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

5 µA @ 200 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SJPE-H3

Sanken Electric USA Inc.

SCHOTTKY BARRIER DIODE (SURFACE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

CDLL645-TR

Microchip Technology

DIODE GP 225V 400MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 225 V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

225 V

400mA

1 V @ 400 mA

Standard Recovery >500ns, > 200mA (Io)

-

50 nA @ 225 V

-

Surface Mount

DO-213AA

-65°C ~ 175°C

SBA0530Q-AU_R1_000A1

Panjit International Inc.

DIODE SCHOTTKY 30V 500MA 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: 2-DFN (1x0.6)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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30 V

500mA

520 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 30 V

-

Surface Mount

0402 (1006 Metric)

2-DFN (1x0.6)

-55°C ~ 150°C

PMEG120G20ELPJ

Nexperia USA Inc.

DIODE SIGE 120V 2A SOD128/CFP5

Diode Type: SiGe (Silicon Germanium)
Voltage - DC Reverse (Vr) (Max): 120 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C (Max)

封装: -

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120 V

2A

840 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

11 ns

30 nA @ 120 V

75pF @ 1V, 1MHz

Surface Mount

SOD-128

SOD-128/CFP5

175°C (Max)

FR505-TP

Micro Commercial Co

DIODE GEN PURP 600V 5A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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600 V

5A

1.35 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

10 µA @ 600 V

65pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C