页 115 - 二极管 - 整流器 - 阵列 | 分立半导体产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802

二极管 - 整流器 - 阵列

记录 16,443
页  115/549
图片
零件编号
制造商
描述
封装
库存
数量
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
BAV99HDWQ-7
Diodes Incorporated

DIODE ARRAY GEN PURP 100V SOT363

  • Diode Configuration: 2 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存6,096
Standard
100V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
4ns
500nA @ 80V
-65°C ~ 150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
MBR20H90CTG-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY TO-220AC

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature - Junction: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,880
-
-
-
-
-
-
-
-
-
-
-
MBRT40030L
GeneSiC Semiconductor

DIODE SCHOTTKY 30V 200A 3 TOWER

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 30V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
封装: Three Tower
库存4,320
Schottky
30V
200A
580mV @ 200A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 30V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
GDP60Y120B
Global Power Technologies Group

DIODE SCHOTTKY 1200V 30A TO247-3

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 135°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存7,120
Silicon Carbide Schottky
1200V
30A
1.7V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 1200V
-55°C ~ 135°C
Through Hole
TO-247-3
TO-247-3
203CMQ100
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 100A TO244AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 860mV @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 100V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-244AB
  • Supplier Device Package: TO-244AB
封装: TO-244AB
库存6,160
Schottky
100V
100A
860mV @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 100V
-55°C ~ 175°C
Chassis Mount
TO-244AB
TO-244AB
SCPNP5
Semtech Corporation

ASSY DOUBLER 5.5A 5KV STD REC

  • Diode Configuration: -
  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): 5000V
  • Current - Average Rectified (Io) (per Diode): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 5V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2000ns
  • Current - Reverse Leakage @ Vr: 1µA @ 5000V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: -
  • Package / Case: Module
  • Supplier Device Package: -
封装: Module
库存6,304
-
5000V
5.5A
5V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2000ns
1µA @ 5000V
-55°C ~ 150°C
-
Module
-
HTZ120A51K
IXYS

DIODE MODULE 51KV 2A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 51000V
  • Current - Average Rectified (Io) (per Diode): 2A
  • Voltage - Forward (Vf) (Max) @ If: 36.8V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 51000V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: Module
库存5,440
Standard
51000V
2A
36.8V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
500µA @ 51000V
-
Chassis Mount
Module
Module
209CNQ150
SMC Diode Solutions

DIODE SCHOTTKY 150V 100A PRM4

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.03V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 3mA @ 150V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: PRM4
  • Supplier Device Package: PRM4 (Non-Isolated)
封装: PRM4
库存5,152
Schottky
150V
100A
1.03V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 150V
-55°C ~ 175°C
Chassis Mount
PRM4
PRM4 (Non-Isolated)
DSEP2X60-12A
IXYS

DIODE MODULE 1.2KV 60A SOT227B

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.42V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 40ns
  • Current - Reverse Leakage @ Vr: 1mA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
封装: SOT-227-4, miniBLOC
库存6,784
Standard
1200V
60A
2.42V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
1mA @ 1200V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B
MBR2X120A100
GeneSiC Semiconductor

DIODE SCHOTTKY 100V 120A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 120A
  • Voltage - Forward (Vf) (Max) @ If: 840mV @ 120A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封装: SOT-227-4, miniBLOC
库存6,880
Schottky
100V
120A
840mV @ 120A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
-40°C ~ 150°C
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
GSXF030A120S1-D3
Global Power Technologies Group

DIODE FAST REC 1200V 30A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.35V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 85ns
  • Current - Reverse Leakage @ Vr: 25µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封装: SOT-227-4, miniBLOC
库存2,832
Standard
1200V
30A
2.35V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
25µA @ 1200V
-55°C ~ 175°C
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-113CNQ100ASMPBF
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V D618SM

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 55A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 110A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 100V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: D-61-8-SM
  • Supplier Device Package: D-61-8-SM
封装: D-61-8-SM
库存2,944
Schottky
100V
55A
1V @ 110A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 100V
175°C (Max)
Through Hole
D-61-8-SM
D-61-8-SM
VS-HFA08TB120STRRP
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 1200V 8A D2PAK

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 8A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 3.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1200V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,552
Standard
1200V
8A (DC)
3.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
10µA @ 1200V
-55°C ~ 150°C
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
MBR3045FCTE3/TU
Microsemi Corporation

DIODE ARRAY SCHOTTKY 45V TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 45V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存2,928
Schottky
45V
15A
700mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 45V
-65°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
BAS70-04-HE3-18
Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 70V SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存6,000
Schottky
70V
200mA (DC)
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
5ns
100nA @ 50V
125°C (Max)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot SB05W05C-TB-E
ON Semiconductor

DIODE ARRAY SCHOTTKY 50V 3CP

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io) (per Diode): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 50µA @ 25V
  • Operating Temperature - Junction: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-96
  • Supplier Device Package: 3-CP
封装: SC-96
库存72,000
Schottky
50V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
50µA @ 25V
-55°C ~ 125°C
Surface Mount
SC-96
3-CP
SCS210KE2HRC
Rohm Semiconductor

DIODE ARRAY SCHOTTKY 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 20A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 20A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 600V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封装: TO-247-3
库存9,216
Silicon Carbide Schottky
650V
20A (DC)
1.55V @ 20A
No Recovery Time > 500mA (Io)
-
400µA @ 600V
175°C (Max)
Through Hole
TO-247-3
TO-247
hot STPS20150CT
STMicroelectronics

DIODE ARRAY SCHOTTKY 150V TO220

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Operating Temperature - Junction: 175°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存202,716
Schottky
150V
10A
920mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 150V
175°C (Max)
Through Hole
TO-220-3
TO-220AB
NTE6234
NTE Electronics, Inc

DIODE MODULE GP 1600V 190A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io) (per Diode): 190A
  • Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 600 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12 µA @ 1600 V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
-
190A
1.38 V @ 600 A
Standard Recovery >500ns, > 200mA (Io)
-
12 µA @ 1600 V
-
Chassis Mount
Module
Module
DD260N12KKHPSA1
Infineon Technologies

DIODE MODULE GP 1.2KV 260A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 260A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
  • Operating Temperature - Junction: 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1200 V
260A
1.32 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1200 V
150°C
Chassis Mount
Module
Module
MSRT200140D
GeneSiC Semiconductor

DIODE MODULE GP 1.4KV 3TOWER

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower
封装: -
Request a Quote
Standard
1400 V
200A
1.1 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1400 V
-55°C ~ 150°C
Chassis Mount
Three Tower
Three Tower
PCDH3065CCGB_T0_00601
Panjit International Inc.

DIODE ARR SIC 650V 15A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 650 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: -
库存4,500
SiC (Silicon Carbide) Schottky
650 V
15A
1.6 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 650 V
-55°C ~ 175°C
Through Hole
TO-247-3
TO-247AD
DD600N14KHPSA2
Infineon Technologies

DIODE MODULE GP 1.4KV 600A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io) (per Diode): 600A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: -
Request a Quote
Standard
1400 V
600A
1.32 V @ 1800 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1400 V
-40°C ~ 150°C
Chassis Mount
Module
Module
VX30202CHM3-P
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOT 200V 15A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: -
Request a Quote
Schottky
200 V
15A
840 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 200 V
-40°C ~ 175°C
Through Hole
TO-220-3
TO-220AB
DD340N22STIMHPSA1
Infineon Technologies

DIODE MOD GP 2200V BGPB50SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 330A
  • Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 2200 V
  • Operating Temperature - Junction: 130°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB50SB-1
封装: -
库存6
Standard
2200 V
330A
1.31 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
1 mA @ 2200 V
130°C
Chassis Mount
Module
BG-PB50SB-1
CMPD2836-TR-PBFREE
Central Semiconductor Corp

DIODE ARRAY GP 75V 200MA SOT23

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io) (per Diode): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 240 V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: -
库存61,311
Standard
75 V
200mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
100 nA @ 240 V
-65°C ~ 150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
SLS120J080A-ISBTH
Luminus Devices Inc.

DIODE MODULE 1200V-80A SOT-227

  • Diode Configuration: 2 Independent
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 80A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 80 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 240 µA @ 1.2 kV
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封装: -
Request a Quote
SiC (Silicon Carbide) Schottky
1200 V
80A
1.4 V @ 80 A
No Recovery Time > 500mA (Io)
0 ns
240 µA @ 1.2 kV
-55°C ~ 175°C
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
BD6200CS_L2_00001
Panjit International Inc.

DIODE ARR SCHOTT 200V 6A TO252

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 6A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 200 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
封装: -
库存9,000
Schottky
200 V
6A
900 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 200 V
-65°C ~ 175°C
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252
VX60202PGW-M3-P
Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOT 200V 30A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: -
库存132
Schottky
200 V
30A
920 mV @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 200 V
-40°C ~ 175°C
Through Hole
TO-247-3
TO-247AD
MBR3060PT_T0_00001
Panjit International Inc.

DIODE ARR SCHOTT 60V 30A TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (TO-3P)
封装: -
库存7,086
Schottky
60 V
30A
750 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
-65°C ~ 175°C
Through Hole
TO-247-3
TO-247AD (TO-3P)