页 25 - Diodes Incorporated 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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Diodes Incorporated 产品 - 晶体管 - FET，MOSFET - 单

记录 2,523
页  25/85
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMP1012USS-13
Diodes Incorporated

MOSFET BVDSS: 8V-24V SO-8 T&R 2.

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
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MOSFET (Metal Oxide)
12 V
8.5A (Ta)
1.8V, 4.5V
1V @ 250µA
19.5 nC @ 4.5 V
1344 pF @ 10 V
±8V
-
1.3W (Ta)
15mOhm @ 9A, 4.5V
-55°C ~ 150°C (TJ)
-
-
-
DMTH10H032SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V PowerDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 544 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
100 V
25A (Tc)
10V
4V @ 250µA
8 nC @ 10 V
544 pF @ 50 V
±20V
-
3.2W (Ta), 38W (Tc)
32mOhm @ 5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
2N7002WKX-13
Diodes Incorporated

MOSFET N-CH 60V 115MA SOT323

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
封装: -
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MOSFET (Metal Oxide)
60 V
115mA (Ta)
5V, 10V
2V @ 250µA
-
50 pF @ 25 V
±20V
-
200mW (Ta)
7.5Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMN3016LFDFQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V U-DFN2020-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 730mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
封装: -
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MOSFET (Metal Oxide)
30 V
10A (Ta)
4.5V, 10V
2V @ 250µA
25.1 nC @ 10 V
1415 pF @ 15 V
±20V
-
730mW (Ta)
12mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMN62D2U-7
Diodes Incorporated

2N7002 FAMILY SOT23 T&R 3K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
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MOSFET (Metal Oxide)
60 V
390mA (Ta)
1.8V, 5V
1V @ 250µA
0.8 nC @ 4.5 V
41 pF @ 30 V
±20V
-
500mW (Ta)
2Ohm @ 50mA, 5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMN2991UFZQ-7B
Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN0606-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.28 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14.6 pF @ 16 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 450mW (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN0606-3
  • Package / Case: 3-XFDFN
封装: -
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MOSFET (Metal Oxide)
20 V
550mA (Ta)
1.5V, 4.5V
1V @ 250µA
0.28 nC @ 4.5 V
14.6 pF @ 16 V
±8V
-
450mW (Ta)
990mOhm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN0606-3
3-XFDFN
DMN6040SFDEQ-7
Diodes Incorporated

MOSFET N-CH 60V 5.3A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 660mW (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type E)
  • Package / Case: 6-PowerUDFN
封装: -
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MOSFET (Metal Oxide)
60 V
5.3A (Ta)
4.5V, 10V
3V @ 250µA
22.4 nC @ 10 V
1287 pF @ 25 V
±20V
-
660mW (Ta)
38mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type E)
6-PowerUDFN
DMPH4016SSS-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V SO-8 T&R 2

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
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MOSFET (Metal Oxide)
40 V
11A (Ta)
4.5V, 10V
2.5V @ 250µA
112 nC @ 10 V
5697 pF @ 20 V
±20V
-
1.9W
11mOhm @ 9.8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
DMTH4008LFDFW-13
Diodes Incorporated

MOSFET N-CH 40V 11.6A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 990mW (Ta)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
  • Package / Case: 6-UDFN Exposed Pad
封装: -
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MOSFET (Metal Oxide)
40 V
11.6A (Ta)
4.5V, 10V
3V @ 250µA
14.2 nC @ 10 V
1030 pF @ 20 V
±20V
-
990mW (Ta)
11.5mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
U-DFN2020-6 (SWP) (Type F)
6-UDFN Exposed Pad
DMTH45M5LPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
封装: -
库存14,319
MOSFET (Metal Oxide)
40 V
86A (Tc)
4.5V, 10V
2.3V @ 250µA
13.9 nC @ 10 V
978 pF @ 20 V
±20V
-
3.5W (Ta), 72W (Tc)
5.5mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMTH4M95SPS-13
Diodes Incorporated

MOSFET N-CH 40V 100A PWRDI5060-8

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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-
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-
-
-
DMN22M5UFG-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V POWERDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3926 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 13.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
20 V
24A (Ta), 27A (Tc)
2.5V, 4.5V
1.3V @ 250µA
99 nC @ 10 V
3926 pF @ 10 V
±12V
-
600mW (Ta)
2mOhm @ 13.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMN2451UFB4-7B
Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN1006-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 660mW (Ta)
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1006-3
  • Package / Case: 3-XFDFN
封装: -
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MOSFET (Metal Oxide)
20 V
1.3A (Ta)
1.8V, 4.5V
1V @ 250µA
6.4 nC @ 10 V
32 pF @ 16 V
±12V
-
660mW (Ta)
400mOhm @ 600mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
DMTH10H003SPSW-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5542 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Ta), 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type Q)
  • Package / Case: 8-PowerTDFN
封装: -
库存7,212
MOSFET (Metal Oxide)
100 V
166A (Tc)
6V, 10V
4V @ 250µA
85 nC @ 10 V
5542 pF @ 50 V
±20V
-
2.6W (Ta), 167W (Tc)
3mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type Q)
8-PowerTDFN
DMG3401LSNQ-13
Diodes Incorporated

MOSFET P-CH 30V 3A SC59-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1326 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 800mW
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
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MOSFET (Metal Oxide)
30 V
3A (Ta)
2.5V, 10V
1.3V @ 250µA
25.1 nC @ 10 V
1326 pF @ 15 V
±12V
-
800mW
50mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SC-59-3
TO-236-3, SC-59, SOT-23-3
DMTH43M8LFGQ-13-01
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 40.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2798 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.62W (Ta), 65.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
40 V
24A (Ta), 100A (Tc)
5V, 10V
2.5V @ 250µA
40.1 nC @ 10 V
2798 pF @ 20 V
±20V
-
2.62W (Ta), 65.2W (Tc)
3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMTH45M5SFVWQ-7
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
40 V
18A (Ta), 71A (Tc)
10V
3.5V @ 250µA
13.2 nC @ 10 V
1083 pF @ 20 V
±20V
-
3.5W (Ta), 51W (Tc)
5.5mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMTH8008SFG-7
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
80 V
17A (Ta), 68A (Tc)
6V, 10V
4V @ 1mA
31.7 nC @ 10 V
1945 pF @ 40 V
±20V
-
1.2W (Ta), 50W (Tc)
7mOhm @ 14A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMT64M2LPSW-13
Diodes Incorporated

MOSFET N-CH 60V 20.7A/100A PWRDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 20.7A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2799 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 83.3W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type Q)
  • Package / Case: 8-PowerTDFN
封装: -
库存7,404
MOSFET (Metal Oxide)
60 V
20.7A (Ta), 100A (Tc)
4.5V, 10V
2.5V @ 250µA
46.7 nC @ 10 V
2799 pF @ 30 V
±20V
-
2.8W (Ta), 83.3W (Tc)
4.4mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8 (Type Q)
8-PowerTDFN
DMP2900UT-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 430mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
封装: -
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MOSFET (Metal Oxide)
20 V
500mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.7 nC @ 4.5 V
49 pF @ 16 V
±6V
-
250mW (Ta)
700mOhm @ 430mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMTH45M5LFVWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
40 V
18A (Ta), 71A (Tc)
4.5V, 10V
2.3V @ 250µA
13.9 nC @ 10 V
978 pF @ 20 V
±20V
-
3.5W (Ta), 51W (Tc)
5.5mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMP2900UW-7
Diodes Incorporated

MOSFET BVDSS: 8V-24V SOT323

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
  • Vgs (Max): ±6V
  • FET Feature: -
  • Power Dissipation (Max): 300mW
  • Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
封装: -
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MOSFET (Metal Oxide)
20 V
600mA (Ta)
1.8V, 4.5V
1V @ 250µA
0.7 nC @ 4.5 V
49 pF @ 16 V
±6V
-
300mW
750mOhm @ 430mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMP3056LDMQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 948 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-26
  • Package / Case: SOT-23-6
封装: -
库存9,000
MOSFET (Metal Oxide)
30 V
4.3A (Ta)
4.5V, 10V
2.1V @ 250µA
21.1 nC @ 10 V
948 pF @ 25 V
±20V
-
1.25W (Ta)
45mOhm @ 5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
DMPH2040UVTQ-7
Diodes Incorporated

MOSFET P-CH 20V 5.6/11.7A TSOT26

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
库存9,000
MOSFET (Metal Oxide)
20 V
5.6A (Ta), 11.7A (Tc)
2.5V, 4.5V
1.5V @ 250µA
19 nC @ 8 V
834 pF @ 10 V
±12V
-
1W (Ta)
38mOhm @ 8.9A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
DMT3009LFVW-7
Diodes Incorporated

MOSFET N-CH 30V 12A PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
封装: -
库存7,950
MOSFET (Metal Oxide)
30 V
12A (Ta), 50A (Tc)
3.8V, 10V
3V @ 250µA
12 nC @ 10 V
823 pF @ 15 V
±20V
-
2.3W (Ta)
11mOhm @ 14.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMTH41M8SPSQ-13
Diodes Incorporated

MOSFET N-CH 40V 100A PWRDI5060-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.03W
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type K)
  • Package / Case: 8-PowerTDFN
封装: -
库存5,814
MOSFET (Metal Oxide)
40 V
100A (Tc)
10V
4V @ 250µA
79.5 nC @ 10 V
6968 pF @ 20 V
±20V
-
3.03W
1.8mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
DMPH4016SK3Q-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V TO252 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.9W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
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MOSFET (Metal Oxide)
40 V
80A (Tc)
4.5V, 10V
2.5V @ 250µA
112 nC @ 10 V
5697 pF @ 20 V
±20V
-
4.9W (Ta), 136W (Tc)
11mOhm @ 9.8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMPH2040UVTQ-13
Diodes Incorporated

MOSFET P-CH 20V 5.6/11.7A TSOT26

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 11.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 834 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 8.9A, 4.5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
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MOSFET (Metal Oxide)
20 V
5.6A (Ta), 11.7A (Tc)
2.5V, 4.5V
1.5V @ 250µA
19 nC @ 8 V
834 pF @ 10 V
±12V
-
1W (Ta)
38mOhm @ 8.9A, 4.5V
-55°C ~ 175°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
DMN3009LFVQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
30 V
60A (Tc)
4.5V, 10V
3V @ 250µA
42 nC @ 10 V
2000 pF @ 15 V
±20V
-
1W (Ta)
5.5mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN65D9L-7
Diodes Incorporated

MOSFET N-CH 60V 335MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 335mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 270mW (Ta)
  • Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存117,096
MOSFET (Metal Oxide)
60 V
335mA (Ta)
4V, 10V
2.5V @ 250µA
0.4 nC @ 4.5 V
41 pF @ 25 V
±16V
-
270mW (Ta)
4Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3