页 20 - Diodes Incorporated 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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Diodes Incorporated 产品 - 晶体管 - FET，MOSFET - 单

记录 2,523
页  20/85
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封装
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数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMN601TKQ-13
Diodes Incorporated

2N7002 FAMILY SOT523 T&R 10K

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 343mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.04 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 200mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
封装: -
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MOSFET (Metal Oxide)
60 V
343mA (Ta)
5V, 10V
2.5V @ 1mA
1.04 nC @ 10 V
41 pF @ 30 V
±20V
-
400mW (Ta)
2Ohm @ 200mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMPH6250SQ-13
Diodes Incorporated

MOSFET P-CH 60V 2.4A SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 512 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 920mW
  • Rds On (Max) @ Id, Vgs: 155mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存21,417
MOSFET (Metal Oxide)
60 V
2.4A (Ta)
4.5V, 10V
3V @ 250µA
8.3 nC @ 10 V
512 pF @ 30 V
±20V
-
920mW
155mOhm @ 2A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
ZXMN10A08E6QTA
Diodes Incorporated

MOSFET BVDSS: 61V~100V SOT26 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 3.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-26
  • Package / Case: SOT-23-6
封装: -
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MOSFET (Metal Oxide)
100 V
1.5A (Ta)
6V, 10V
4V @ 250µA
7.7 nC @ 10 V
405 pF @ 50 V
±20V
-
1.1W (Ta)
250mOhm @ 3.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-26
SOT-23-6
DMT67M8LPSW-13
Diodes Incorporated

MOSFET N-CH 60V 17.3A/82A PWRDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta), 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type Q)
  • Package / Case: 8-PowerTDFN
封装: -
库存14,835
MOSFET (Metal Oxide)
60 V
17.3A (Ta), 82A (Tc)
4.5V, 10V
2.5V @ 250µA
37.5 nC @ 10 V
2130 pF @ 30 V
±20V
-
2.8W (Ta), 62.5W (Tc)
6.2mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8 (Type Q)
8-PowerTDFN
DMTH12H007SK3-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V TO252 T&

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
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MOSFET (Metal Oxide)
120 V
86A (Tc)
10V
4V @ 250µA
44 nC @ 10 V
3142 pF @ 60 V
±20V
-
2W (Ta)
8.9mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMTH47M2SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
40 V
73A (Tc)
10V
4V @ 250µA
12.1 nC @ 10 V
897 pF @ 20 V
±20V
-
3.3W (Ta), 68W (Tc)
7.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
ZXMN3B01FTC
Diodes Incorporated

MOSFET N-CH 30V 1.7A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 2.93 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 258 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 625mW (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
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MOSFET (Metal Oxide)
30 V
1.7A (Ta)
2.5V, 4.5V
700mV @ 250µA (Min)
2.93 nC @ 4.5 V
258 pF @ 15 V
±12V
-
625mW (Ta)
150mOhm @ 1.7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH10H010SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 166W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
100 V
15A (Ta), 100A (Tc)
6V, 10V
4V @ 250µA
56.4 nC @ 10 V
4468 pF @ 50 V
±20V
-
3W (Ta), 166W (Tc)
8.8mOhm @ 13A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMTH4008LPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 64.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.99W (Ta), 55.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
40 V
14.4A (Ta), 64.8A (Tc)
5V, 10V
3V @ 250µA
15.3 nC @ 10 V
1088 pF @ 20 V
±20V
-
2.99W (Ta), 55.5W (Tc)
8.8mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMTH6005LFGQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
60 V
17A (Ta), 98A (Tc)
4.5V, 10V
2.5V @ 250µA
47.5 nC @ 10 V
3223 pF @ 30 V
±20V
-
2.38W (Ta), 75W (Tc)
4.1mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMN3061LCA3-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V X4-DSN1006

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V
  • Vgs (Max): 12V
  • FET Feature: -
  • Power Dissipation (Max): 1.12W
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 500mA, 8V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X4-DSN1006-3 (Type C)
  • Package / Case: 3-XFDFN
封装: -
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MOSFET (Metal Oxide)
30 V
4.6A (Ta)
1.8V, 8V
1.1V @ 250µA
1.4 nC @ 4.5 V
126 pF @ 15 V
12V
-
1.12W
58mOhm @ 500mA, 8V
-55°C ~ 150°C (TJ)
Surface Mount
X4-DSN1006-3 (Type C)
3-XFDFN
DMN3009LFVW-13
Diodes Incorporated

MOSFET N-CH 30V 60A POWERDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
30 V
60A (Tc)
4.5V, 10V
2.5V @ 250µA
42 nC @ 10 V
2000 pF @ 15 V
±20V
-
1W (Ta)
5mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN2991UTQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 15 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 280mW (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
封装: -
库存9,000
MOSFET (Metal Oxide)
20 V
300mA (Ta)
1.5V, 4.5V
1V @ 250µA
0.35 nC @ 4.5 V
21.5 pF @ 15 V
±10V
-
280mW (Ta)
3Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMN3028LQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 860mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
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MOSFET (Metal Oxide)
30 V
6.2A (Ta)
2.5V, 10V
1.8V @ 250µA
10.9 nC @ 10 V
680 pF @ 15 V
±20V
-
860mW (Ta)
25mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH6016LFDFWQ-7
Diodes Incorporated

MOSFET N-CH 60V 9.4A 6UDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.06W (Ta)
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
  • Package / Case: 6-UDFN Exposed Pad
封装: -
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MOSFET (Metal Oxide)
60 V
9.4A (Ta)
4.5V, 10V
3V @ 250µA
15.3 nC @ 10 V
925 pF @ 30 V
±20V
-
1.06W (Ta)
18mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
U-DFN2020-6 (SWP) (Type F)
6-UDFN Exposed Pad
DMTH6016LFVWQ-7-A
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.17W (Ta)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
60 V
41A (Tc)
4.5V, 10V
2.5V @ 250µA
15.1 nC @ 10 V
939 pF @ 30 V
±20V
-
1.17W (Ta)
16mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMP32D8UFZ-7B
Diodes Incorporated

MOSFET BVDSS: 25V~30V X2-DFN0606

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 290mW (Ta)
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN0606-3
  • Package / Case: 3-XFDFN
封装: -
库存28,746
MOSFET (Metal Oxide)
30 V
200mA (Ta)
1.2V, 4.5V
1V @ 250µA
0.35 nC @ 4.5 V
17 pF @ 15 V
±10V
-
290mW (Ta)
5Ohm @ 100mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN0606-3
3-XFDFN
DMT6015LFVW-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 30 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 28.4W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
60 V
10A (Ta), 31.8A (Tc)
4.5V, 10V
2.5V @ 250µA
15.7 nC @ 10 V
808 pF @ 30 V
±16V
-
2.8W (Ta), 28.4W (Tc)
16mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMN2040UQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
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MOSFET (Metal Oxide)
20 V
6A (Ta)
2.5V, 4.5V
1.2V @ 250µA
7.5 nC @ 4.5 V
667 pF @ 10 V
±12V
-
800mW (Ta)
25mOhm @ 8.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH10H015SPS-13
Diodes Incorporated

MOSFET N-CH 100V PWRDI5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 50.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta), 55W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
100 V
8.4A (Ta), 50.5A (Tc)
6V, 10V
4V @ 250µA
30.1 nC @ 10 V
2343 pF @ 50 V
±20V
-
1.5W (Ta), 55W (Tc)
14.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMN2310UFB4-7B
Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN1006-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 710mW (Ta)
  • Rds On (Max) @ Id, Vgs: 175mOhm @ 1A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1006-3
  • Package / Case: 3-XFDFN
封装: -
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MOSFET (Metal Oxide)
20 V
2.1A (Ta)
1.5V, 4.5V
950mV @ 250µA
0.7 nC @ 4.5 V
38 pF @ 10 V
±8V
-
710mW (Ta)
175mOhm @ 1A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
DMG4496SSSQ-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SO-8 T&R 2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 493.5 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 1.42W (Ta)
  • Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
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MOSFET (Metal Oxide)
30 V
10A (Ta)
4.5V, 10V
2V @ 250µA
10.2 nC @ 10 V
493.5 pF @ 15 V
±25V
-
1.42W (Ta)
21.5mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
DMTH43M8LPS-13
Diodes Incorporated

MOSFET N-CH 40V 22A PWRDI5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2693 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
40 V
22A (Ta), 100A (Tc)
5V, 10V
2.5V @ 250µA
38.5 nC @ 10 V
2693 pF @ 30 V
±20V
-
2.7W (Ta), 83W (Tc)
3.3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMP6110SFDFQ-13
Diodes Incorporated

MOSFET P-CH 60V 3.5A 6UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 760mW (Ta)
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad
封装: -
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MOSFET (Metal Oxide)
60 V
3.5A (Ta)
4.5V, 10V
3V @ 250µA
17.2 nC @ 10 V
969 pF @ 30 V
±20V
-
760mW (Ta)
110mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
U-DFN2020-6 (Type F)
6-UDFN Exposed Pad
DMP2006UFGQ-7
Diodes Incorporated

MOSFET P-CH 20V PWRDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
封装: -
库存5,970
MOSFET (Metal Oxide)
20 V
17.5A (Ta), 40A (Tc)
1.5V, 4.5V
1V @ 250µA
200 nC @ 10 V
7500 pF @ 10 V
±10V
-
2.3W (Ta), 41W (Tc)
5.5mOhm @ 15A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
DMT12H007LPS-13
Diodes Incorporated

MOSFET N-CH 120V 90A PWRDI5060-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W
  • Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
封装: -
库存14,646
MOSFET (Metal Oxide)
120 V
90A (Tc)
4.5V, 10V
2.5V @ 250µA
49 nC @ 10 V
3224 pF @ 60 V
±20V
-
2.9W
7.8mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMN6041SVT-13
Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 900mW
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
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MOSFET (Metal Oxide)
60 V
4.1A (Ta)
4.5V, 10V
3V @ 250µA
21 nC @ 10 V
1190 pF @ 30 V
±20V
-
900mW
48mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
DMTH10H4M5LPS-13
Diodes Incorporated

MOSFET N-CH 100V PWRDI5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4843 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
100 V
20A (Ta), 100A (Tc)
4.5V, 10V
2.5V @ 250µA
80 nC @ 10 V
4843 pF @ 50 V
±20V
-
2.7W (Ta), 136W (Tc)
4.3mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMTH10H010SPS-13
Diodes Incorporated

MOSFET N-CH 100V PWRDI5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
封装: -
库存29,655
MOSFET (Metal Oxide)
100 V
11.8A (Ta), 123A (Tc)
6V, 10V
4V @ 250µA
56.4 nC @ 10 V
4468 pF @ 50 V
±20V
-
1.5W (Ta)
8.8mOhm @ 13A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMN22M5UFG-7
Diodes Incorporated

MOSFET N-CH 20V 27A POWERDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3926 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 600mW (Ta)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 13.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
封装: -
库存11,076
MOSFET (Metal Oxide)
20 V
24A (Ta), 27A (Tc)
2.5V, 4.5V
1.3V @ 250µA
99 nC @ 10 V
3926 pF @ 10 V
±12V
-
600mW (Ta)
2mOhm @ 13.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN