页 21 - Diodes Incorporated 产品 - 晶体管 - FET，MOSFET - 阵列

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DMC4015SSD-13	Diodes Incorporated	MOSFET N/P-CH 40V 8.6A/6.5A 8-SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A Rds On (Max) @ Id, Vgs: 15 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,336	Logic Level Gate	40V	8.6A, 6.2A	15 mOhm @ 3A, 10V	3V @ 250µA	40nC @ 10V	1810pF @ 20V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMN2AMCTA	Diodes Incorporated	MOSFET 2N-CH 20V 2.9A DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (3x2)	封装: 8-WDFN Exposed Pad	库存36,000	Logic Level Gate	20V	2.9A	120 mOhm @ 4A, 4.5V	3V @ 250µA	3.1nC @ 4.5V	299pF @ 15V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN (3x2)
DMNH6042SSDQ-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SO-8 T&R 2 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V Power - Max: 2.1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,472	Standard	60V	16.7A (Tc)	50 mOhm @ 5.1A, 10V	3V @ 250µA	4.2nC @ 4.5V	584pF @ 25V	2.1W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMT3009LDT-7	Diodes Incorporated	MOSFET 2N-CH 30V 30A V-DFN3030-8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 14.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: V-DFN3030-8 (Type K)	封装: 8-VDFN Exposed Pad	库存2,976	Standard	30V	30A	11.1 mOhm @ 14.4A, 10V	3V @ 250µA	20nC @ 15V	1500pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	V-DFN3030-8 (Type K)
DMN2010UDZ-7	Diodes Incorporated	MOSFET 2N-CH 20V 11A U-DFN2535-6 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 7 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2665pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2535-6	封装: 6-UDFN Exposed Pad	库存4,320	Standard	24V	11A	7 mOhm @ 5.5A, 4.5V	1.5V @ 250µA	33.2nC @ 4.5V	2665pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2535-6
DMNH4015SSDQ-13	Diodes Incorporated	MOSFET ARRAY N-CH 40V 8.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,056	Standard	40V	8.6A (Ta)	15 mOhm @ 12A, 10V	3V @ 250µA	33nC @ 10V	1938pF @ 15V	1.4W, 2W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC4029SSDQ-13	Diodes Incorporated	MOSFET N/P-CH 40V 7A/5.1A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,040	Logic Level Gate	40V	7A, 5.1A	24 mOhm @ 6A, 10V	3V @ 250µA	19.1nC @ 10V	1060pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ZXMN3AM832TA	Diodes Incorporated	MOSFET 2N-CH 30V 2.9A 8MLP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V Power - Max: 1.13W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-MLP (3x2)	封装: 8-VDFN Exposed Pad	库存526,776	Logic Level Gate	30V	2.9A	120 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	3.9nC @ 10V	190pF @ 25V	1.13W	-55°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-MLP (3x2)
DMG6898LSDQ-13	Diodes Incorporated	MOSFET 2N-CH 20V 9.5A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.5A Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V Power - Max: 1.28W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,152	Standard	20V	9.5A	16 mOhm @ 9.4A, 4.5V	1.5V @ 250µA	26nC @ 10V	1149pF @ 10V	1.28W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZXMN3F31DN8TA	Diodes Incorporated	MOSFET 2N-CH 30V 5.7A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存564,708	Logic Level Gate	30V	5.7A	24 mOhm @ 7A, 10V	3V @ 250µA	12.9nC @ 10V	608pF @ 15V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMC2041UFDB-7	Diodes Incorporated	MOSFET N/P-CH 20V 6UDFN FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存5,920	Standard	20V	4.7A, 3.2A	40 mOhm @ 4.2A, 4.5V	1.4V @ 250µA	15nC @ 8V	713pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMP3036SSD-13	Diodes Incorporated	MOSFET 2P-CH 30V 10.6A 8-SO FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.6A Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,992	Logic Level Gate	30V	10.6A	20 mOhm @ 9A, 10V	3V @ 250µA	16.5nC @ 10V	1931pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC1016UPD-13	Diodes Incorporated	MOSFET 8V 24V POWERDI5060-8 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	封装: 8-PowerTDFN	库存7,184	Standard	12V, 20V	9.5A, 8.7A	17 mOhm @ 11.8A, 4.5V	1.5V @ 250µA	32nC @ 8V	1454pF @ 6V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
DMC1029UFDB-7	Diodes Incorporated	MOSFET N/P-CH 12V 6UDFN FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存5,760	Standard	12V	5.6A, 3.8A	29 mOhm @ 5A, 4.5V	1V @ 250µA	19.6nC @ 8V	914pF @ 6V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMC4050SSDQ-13	Diodes Incorporated	MOSFET N/P-CH 40V 5.3A 8SO FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,376	Standard	40V	5.3A	45 mOhm @ 3A, 10V	1.8V @ 250µA	37.56nC @ 10V	1790.8pF @ 20V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC3028LSDXQ-13	Diodes Incorporated	MOSFET N/P-CH 30V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,056	Standard	30V	5.5A, 5.8A	27 mOhm @ 6A, 10V	3V @ 250µA	13.2nC @ 5V	641pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ZDM4306NTA	Diodes Incorporated	MOSFET 2N-CH 60V 2A SOT-223-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power - Max: 3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SM8	封装: SOT-223-8	库存19,950	Standard	60V	2A	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SM8
ZDM4306NTC	Diodes Incorporated	MOSFET 2N-CH 60V 2A SOT-223-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power - Max: 3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SOT-223	封装: SOT-223-8	库存3,200	Standard	60V	2A	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SOT-223
DMN2013UFX-7	Diodes Incorporated	MOSFET 2N-CH 20V 10A 6-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.5A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V Power - Max: 780mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VFDFN Exposed Pad Supplier Device Package: W-DFN5020-6	封装: 6-VFDFN Exposed Pad	库存3,472	Logic Level Gate	20V	10A	11.5 mOhm @ 8.5A, 4.5V	1.1V @ 250µA	57.4nC @ 8V	2607pF @ 10V	780mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VFDFN Exposed Pad	W-DFN5020-6
DMP3098LSD-13	Diodes Incorporated	MOSFET 2P-CH 30V 4.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 65 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存578,628	Logic Level Gate	30V	4.4A	65 mOhm @ 5A, 10V	2.1V @ 250µA	7.8nC @ 10V	336pF @ 25V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN3015LSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 8.4A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta) Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,480	Standard	30V	8.4A (Ta)	15 mOhm @ 12A, 10V	2.5V @ 250µA	25.1nC @ 10V	1415pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC1018UPD-13	Diodes Incorporated	MOSFET N/P-CH 12V POWERDI5060 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	封装: 8-PowerTDFN	库存2,352	Standard	12V, 20V	9.5A, 6.9A	17 mOhm @ 11.8A, 4.5V	1.5V @ 250µA	30.4nC @ 8V	1525pF @ 6V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
DMS3017SSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 8A/6A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 6A Rds On (Max) @ Id, Vgs: 12 mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 15V Power - Max: 1.19W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,616	Logic Level Gate	30V	8A, 6A	12 mOhm @ 9.5A, 10V	2.5V @ 250µA	30.6nC @ 10V	1276pF @ 15V	1.19W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN2008LFU-7	Diodes Incorporated	MOSFET 2N-CHA 20V 14.5A DFN2030 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	封装: 6-UFDFN Exposed Pad	库存3,264	Standard	20V	14.5A	5.4 mOhm @ 5.5A, 4.5V	1.5V @ 250A	42.3nC @ 10V	1418pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
DMN2023UCB4-7	Diodes Incorporated	MOSFET 2N-CH X1-WLB1818-4 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.45W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, WLBGA Supplier Device Package: X1-WLB1818-4	封装: 4-XFBGA, WLBGA	库存6,528	Logic Level Gate	-	-	-	-	29nC @ 4.5V	-	1.45W	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA, WLBGA	X1-WLB1818-4
DMG4932LSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 9.5A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V Power - Max: 1.19W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存60,000	Logic Level Gate	30V	9.5A	15 mOhm @ 9A, 10V	2.4V @ 250µA	42nC @ 10V	1932pF @ 15V	1.19W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMP2035UTS-13	Diodes Incorporated	MOSFET 2P-CH 20V 6.04A 8TSSOP FET Type: 2 P-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.04A Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V Power - Max: 890mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存6,592	Logic Level Gate	20V	6.04A	35 mOhm @ 4A, 4.5V	1V @ 250µA	15.4nC @ 4.5V	1610pF @ 10V	890mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
DMC1017UPD-13	Diodes Incorporated	MOSFET N/P-CH 12V 9.5A/6.9A SMD FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1787pF @ 6V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	封装: 8-PowerTDFN	库存60,000	Standard	12V	9.5A, 6.9A	17 mOhm @ 11.8A, 4.5V	1.5V @ 250µA	35.4nC @ 10V	1787pF @ 6V	2.3W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
DMC3021LSDQ-13	Diodes Incorporated	MOSFET N/P-CH 30V 8.5A/7A 8-SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,472	Logic Level Gate	30V	8.5A, 7A	21 mOhm @ 7A, 10V	2.1V @ 250µA	16.1nC @ 10V	767pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMC3016LSD-13	Diodes Incorporated	MOSFET N/P-CH 30V 8.2A/6.2A 8SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,480	Logic Level Gate	30V	8.2A, 6.2A	16 mOhm @ 12A, 10V	2.3V @ 250µA	25.1nC @ 10V	1415pF @ 15V	1.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO

DMC4015SSD-13

Diodes Incorporated

MOSFET N/P-CH 40V 8.6A/6.5A 8-SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.6A, 6.2A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 20V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,336

Logic Level Gate

40V

8.6A, 6.2A

15 mOhm @ 3A, 10V

3V @ 250µA

40nC @ 10V

1810pF @ 20V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXMN2AMCTA

Diodes Incorporated

MOSFET 2N-CH 20V 2.9A DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN (3x2)

封装: 8-WDFN Exposed Pad

库存36,000

Logic Level Gate

20V

2.9A

120 mOhm @ 4A, 4.5V

3V @ 250µA

3.1nC @ 4.5V

299pF @ 15V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN (3x2)

DMNH6042SSDQ-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8 T&R 2

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,472

Standard

60V

16.7A (Tc)

50 mOhm @ 5.1A, 10V

3V @ 250µA

4.2nC @ 4.5V

584pF @ 25V

2.1W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMT3009LDT-7

Diodes Incorporated

MOSFET 2N-CH 30V 30A V-DFN3030-8

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: V-DFN3030-8 (Type K)

封装: 8-VDFN Exposed Pad

库存2,976

Standard

30V

30A

11.1 mOhm @ 14.4A, 10V

3V @ 250µA

20nC @ 15V

1500pF @ 15V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

V-DFN3030-8 (Type K)

DMN2010UDZ-7

Diodes Incorporated

MOSFET 2N-CH 20V 11A U-DFN2535-6

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 7 mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2665pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2535-6

封装: 6-UDFN Exposed Pad

库存4,320

Standard

24V

11A

7 mOhm @ 5.5A, 4.5V

1.5V @ 250µA

33.2nC @ 4.5V

2665pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2535-6

DMNH4015SSDQ-13

Diodes Incorporated

MOSFET ARRAY N-CH 40V 8.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1938pF @ 15V
Power - Max: 1.4W, 2W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,056

Standard

40V

8.6A (Ta)

15 mOhm @ 12A, 10V

3V @ 250µA

33nC @ 10V

1938pF @ 15V

1.4W, 2W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC4029SSDQ-13

Diodes Incorporated

MOSFET N/P-CH 40V 7A/5.1A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A, 5.1A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,040

Logic Level Gate

40V

7A, 5.1A

24 mOhm @ 6A, 10V

3V @ 250µA

19.1nC @ 10V

1060pF @ 20V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

ZXMN3AM832TA

Diodes Incorporated

MOSFET 2N-CH 30V 2.9A 8MLP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
Power - Max: 1.13W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-MLP (3x2)

封装: 8-VDFN Exposed Pad

库存526,776

Logic Level Gate

30V

2.9A

120 mOhm @ 2.5A, 10V

1V @ 250µA (Min)

3.9nC @ 10V

190pF @ 25V

1.13W

-55°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-MLP (3x2)

DMG6898LSDQ-13

Diodes Incorporated

MOSFET 2N-CH 20V 9.5A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V
Power - Max: 1.28W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,152

Standard

20V

9.5A

16 mOhm @ 9.4A, 4.5V

1.5V @ 250µA

26nC @ 10V

1149pF @ 10V

1.28W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZXMN3F31DN8TA

Diodes Incorporated

MOSFET 2N-CH 30V 5.7A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存564,708

Logic Level Gate

30V

5.7A

24 mOhm @ 7A, 10V

3V @ 250µA

12.9nC @ 10V

608pF @ 15V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMC2041UFDB-7

Diodes Incorporated

MOSFET N/P-CH 20V 6UDFN

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存5,920

Standard

20V

4.7A, 3.2A

40 mOhm @ 4.2A, 4.5V

1.4V @ 250µA

15nC @ 8V

713pF @ 10V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMP3036SSD-13

Diodes Incorporated

MOSFET 2P-CH 30V 10.6A 8-SO

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.6A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,992

Logic Level Gate

30V

10.6A

20 mOhm @ 9A, 10V

3V @ 250µA

16.5nC @ 10V

1931pF @ 15V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC1016UPD-13

Diodes Incorporated

MOSFET 8V 24V POWERDI5060-8

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 8.7A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1454pF @ 6V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

封装: 8-PowerTDFN

库存7,184

Standard

12V, 20V

9.5A, 8.7A

17 mOhm @ 11.8A, 4.5V

1.5V @ 250µA

32nC @ 8V

1454pF @ 6V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

DMC1029UFDB-7

Diodes Incorporated

MOSFET N/P-CH 12V 6UDFN

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
Rds On (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存5,760

Standard

12V

5.6A, 3.8A

29 mOhm @ 5A, 4.5V

1V @ 250µA

19.6nC @ 8V

914pF @ 6V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMC4050SSDQ-13

Diodes Incorporated

MOSFET N/P-CH 40V 5.3A 8SO

FET Type: N and P-Channel Complementary
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37.56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1790.8pF @ 20V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,376

Standard

40V

5.3A

45 mOhm @ 3A, 10V

1.8V @ 250µA

37.56nC @ 10V

1790.8pF @ 20V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC3028LSDXQ-13

Diodes Incorporated

MOSFET N/P-CH 30V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.8A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,056

Standard

30V

5.5A, 5.8A

27 mOhm @ 6A, 10V

3V @ 250µA

13.2nC @ 5V

641pF @ 15V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ZDM4306NTA

Diodes Incorporated

MOSFET 2N-CH 60V 2A SOT-223-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SM8

封装: SOT-223-8

库存19,950

Standard

60V

2A

330 mOhm @ 3A, 10V

3V @ 1mA

-

350pF @ 25V

3W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SM8

ZDM4306NTC

Diodes Incorporated

MOSFET 2N-CH 60V 2A SOT-223-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SOT-223

封装: SOT-223-8

库存3,200

Standard

60V

2A

330 mOhm @ 3A, 10V

3V @ 1mA

-

350pF @ 25V

3W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SOT-223

DMN2013UFX-7

Diodes Incorporated

MOSFET 2N-CH 20V 10A 6-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 11.5 mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V
Power - Max: 780mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VFDFN Exposed Pad
Supplier Device Package: W-DFN5020-6

封装: 6-VFDFN Exposed Pad

库存3,472

Logic Level Gate

20V

10A

11.5 mOhm @ 8.5A, 4.5V

1.1V @ 250µA

57.4nC @ 8V

2607pF @ 10V

780mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VFDFN Exposed Pad

W-DFN5020-6

DMP3098LSD-13

Diodes Incorporated

MOSFET 2P-CH 30V 4.4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 65 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 336pF @ 25V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存578,628

Logic Level Gate

30V

4.4A

65 mOhm @ 5A, 10V

2.1V @ 250µA

7.8nC @ 10V

336pF @ 25V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN3015LSD-13

Diodes Incorporated

MOSFET 2N-CH 30V 8.4A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta)
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,480

Standard

30V

8.4A (Ta)

15 mOhm @ 12A, 10V

2.5V @ 250µA

25.1nC @ 10V

1415pF @ 15V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC1018UPD-13

Diodes Incorporated

MOSFET N/P-CH 12V POWERDI5060

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

封装: 8-PowerTDFN

库存2,352

Standard

12V, 20V

9.5A, 6.9A

17 mOhm @ 11.8A, 4.5V

1.5V @ 250µA

30.4nC @ 8V

1525pF @ 6V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

DMS3017SSD-13

Diodes Incorporated

MOSFET 2N-CH 30V 8A/6A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 6A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1276pF @ 15V
Power - Max: 1.19W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,616

Logic Level Gate

30V

8A, 6A

12 mOhm @ 9.5A, 10V

2.5V @ 250µA

30.6nC @ 10V

1276pF @ 15V

1.19W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMN2008LFU-7

Diodes Incorporated

MOSFET 2N-CHA 20V 14.5A DFN2030

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

封装: 6-UFDFN Exposed Pad

库存3,264

Standard

20V

14.5A

5.4 mOhm @ 5.5A, 4.5V

1.5V @ 250A

42.3nC @ 10V

1418pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6 (Type B)

DMN2023UCB4-7

Diodes Incorporated

MOSFET 2N-CH X1-WLB1818-4

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.45W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, WLBGA
Supplier Device Package: X1-WLB1818-4

封装: 4-XFBGA, WLBGA

库存6,528

Logic Level Gate

-

29nC @ 4.5V

-

1.45W

-55°C ~ 150°C (TJ)

Surface Mount

4-XFBGA, WLBGA

X1-WLB1818-4

DMG4932LSD-13

Diodes Incorporated

MOSFET 2N-CH 30V 9.5A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A
Rds On (Max) @ Id, Vgs: 15 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V
Power - Max: 1.19W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存60,000

Logic Level Gate

30V

9.5A

15 mOhm @ 9A, 10V

2.4V @ 250µA

42nC @ 10V

1932pF @ 15V

1.19W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMP2035UTS-13

Diodes Incorporated

MOSFET 2P-CH 20V 6.04A 8TSSOP

FET Type: 2 P-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.04A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1610pF @ 10V
Power - Max: 890mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存6,592

Logic Level Gate

20V

6.04A

35 mOhm @ 4A, 4.5V

1V @ 250µA

15.4nC @ 4.5V

1610pF @ 10V

890mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

DMC1017UPD-13

Diodes Incorporated

MOSFET N/P-CH 12V 9.5A/6.9A SMD

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1787pF @ 6V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

封装: 8-PowerTDFN

库存60,000

Standard

12V

9.5A, 6.9A

17 mOhm @ 11.8A, 4.5V

1.5V @ 250µA

35.4nC @ 10V

1787pF @ 6V

2.3W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

DMC3021LSDQ-13

Diodes Incorporated

MOSFET N/P-CH 30V 8.5A/7A 8-SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A, 7A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 767pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,472

Logic Level Gate

30V

8.5A, 7A

21 mOhm @ 7A, 10V

2.1V @ 250µA

16.1nC @ 10V

767pF @ 10V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMC3016LSD-13

Diodes Incorporated

MOSFET N/P-CH 30V 8.2A/6.2A 8SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,480

Logic Level Gate

30V

8.2A, 6.2A

16 mOhm @ 12A, 10V

2.3V @ 250µA

25.1nC @ 10V

1415pF @ 15V

1.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO