页 15 - Diodes Incorporated 产品 - 晶体管 - FET，MOSFET - 阵列

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DMN2025UFDB-13	Diodes Incorporated	MOSFET 2N-CH 20V 6A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: -	Request a Quote	-	20V	6A (Ta)	25mOhm @ 4A, 4.5V	1V @ 250µA	12.3nC @ 10V	486pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
DMN5L06VKQ-13	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	Request a Quote	-	50V	280mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	-	50pF @ 25V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMT32M6LDG-13	Diodes Incorporated	MOSFET 2N-CH 30V 21A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 2.2V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Power - Max: 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type G)	封装: -	库存8,970	-	30V	21A (Ta), 47A (Tc)	2.5mOhm @ 18A, 10V	2.2V @ 400µA	15.6nC @ 4.5V	2101pF @ 15V	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type G)
DMN62D2UDWQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT363 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	60V	340mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	0.8nC @ 4.5V	41pF @ 30V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMT6017LDV-13	Diodes Incorporated	MOSFET 2N-CH 25.3A POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	封装: -	Request a Quote	-	-	25.3A (Tc)	22mOhm @ 6A, 10V	2.3V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
DMN2053UVTQ-13	Diodes Incorporated	MOSFET 2N-CH 20V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	20V	4.6A (Ta)	35mOhm @ 5A, 4.5V	1V @ 250µA	3.6nC @ 4.5V	369pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN52D0UVTQ-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	50V	430mA (Ta)	2Ohm @ 50mA, 5V	1V @ 250µA	1.4nC @ 10V	41pF @ 25V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMC1028UVT-7	Diodes Incorporated	MOSFET N/P-CH 12V 6.1A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	库存10,983	-	12V, 20V	6.1A (Ta), 3.5A (Ta)	25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V	1V @ 250µA	18.5nC @ 8V, 11.5nC @ 8V	787pF @ 6V, 576pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMC1018UPDWQ-13	Diodes Incorporated	MOSFET N/P-CH 12V 20.9A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V Power - Max: 2.6W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	封装: -	库存5,472	-	12V, 20V	10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)	17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V	1.5V @ 250µA	30.4nC @ 8V, 19nC @ 8V	1525pF @ 6V, 866pF @ 6V	2.6W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
DMT4015LDV-13	Diodes Incorporated	MOSFET 2N-CH 40V 7.8A PWRDI3333 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 21.2A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V Power - Max: 1.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	封装: -	Request a Quote	-	40V	7.8A (Ta), 21.2A (Tc)	20mOhm @ 8A, 10V	2.5V @ 250µA	15.7nC @ 10V	808pF @ 30V	1.1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
DMN63D1LVQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 477mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 450mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	Request a Quote	-	60V	477mA (Ta)	2Ohm @ 500mA, 10V	2.5V @ 1mA	1.04nC @ 10V	41pF @ 30V	450mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMC1028UVT-13	Diodes Incorporated	MOSFET N/P-CH 12V 6.1A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	12V, 20V	6.1A (Ta), 3.5A (Ta)	25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V	1V @ 250µA	18.5nC @ 8V, 11.5nC @ 8V	787pF @ 6V, 576pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMC2991UDJ-7	Diodes Incorporated	MOSFET N/P-CH 20V 0.5A SOT963 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V Power - Max: 380mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封装: -	库存29,715	-	20V	500mA (Ta), 360mA (Ta)	990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V	1V @ 250µA	0.35nC @ 4.5V, 0.3nC @ 4.5V	21.5pF @ 15V, 17pF @ 16V	380mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
DMN16M9UCA6-7	Diodes Incorporated	MOSFET 2N-CH X3-DSN2718-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Power - Max: 2.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN2718-6	封装: -	Request a Quote	-	-	-	-	1.3V @ 1mA	35.2nC @ 4.5V	2360pF @ 6V	2.4W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X3-DSN2718-6
DMP31D7LV-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	Request a Quote	-	30V	620mA (Ta)	900mOhm @ 420mA, 10V	2.6V @ 250µA	0.8nC @ 10V	19pF @ 15V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMC3025LSDQ-13	Diodes Incorporated	MOSFET N/P-CH 30V 6.5A/4.2A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V Power - Max: 1.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: -	库存30,333	-	30V	6.5A (Ta), 4.2A (Ta)	20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V	2V @ 250µA	4.6nC @ 4.5V, 5.1nC @ 4.5V	501pF @ 15V, 590pF @ 25V	1.2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN63D1LV-13	Diodes Incorporated	MOSFET 2N-CH 60V 0.55A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.392nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 940mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	Request a Quote	-	60V	550mA (Ta)	2Ohm @ 500mA, 10V	2.5V @ 1mA	0.392nC @ 4.5V	30pF @ 25V	940mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN2710UDWQ-13	Diodes Incorporated	MOSFET 2N-CH 20V 0.8A SOT363 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Power - Max: 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	20V	800mA (Ta)	450mOhm @ 600mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V	42pF @ 16V	360mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMC3730UVT-13	Diodes Incorporated	MOSFET N/P-CH 25V 0.68A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	25V	680mA (Ta), 460mA (Ta)	450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V	1.1V @ 250µA	1.64nC @ 4.5V, 1.1nC @ 4.5V	50pF @ 10V, 63pF @ 10V	700mW	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN2014LHAB-13	Diodes Incorporated	MOSFET 2N-CH 20V 9A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: U-DFN2030-6 (Type B)	封装: -	库存30,000	-	20V	9A (Ta)	13mOhm @ 4A, 4.5V	1.1V @ 250µA	16nC @ 4.5V	1550pF @ 10V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)
DMP4047SSDQ-13	Diodes Incorporated	MOSFET 2P-CH 40V 5.1A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V Power - Max: 1.3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: -	库存7,470	-	40V	5.1A (Ta)	45mOhm @ 4.4A, 10V	3V @ 250µA	21.5nC @ 10V	1154pF @ 20V	1.3W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMP31D7LVQ-7	Diodes Incorporated	MOSFET 2P-CH 30V 0.62A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 620mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存8,220	-	30V	620mA (Ta)	900mOhm @ 420mA, 10V	2.6V @ 250µA	0.8nC @ 10V	19pF @ 15V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMP2040UND-7	Diodes Incorporated	MOSFET 2P-CH 20V 5.3A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 13.6A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 8.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXB)	封装: -	Request a Quote	-	20V	5.3A (Ta), 13.6A (Tc)	36mOhm @ 8.9A, 4.5V	1.5V @ 250µA	20nC @ 10V	834pF @ 10V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXB)
DMN3732UVT-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	30V	1.1A (Ta)	460mOhm @ 200mA, 4.5V	0.95V @ 250µA	0.9nC @ 10V	40.8pF @ 25V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMN2053UVT-13	Diodes Incorporated	MOSFET 2N-CH 20V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	20V	4.6A (Ta)	35mOhm @ 5A, 4.5V	1V @ 250µA	3.6nC @ 4.5V	369pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMTH4011SPD-13	Diodes Incorporated	MOSFET 2N-CH 40V 11.1A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Power - Max: 2.6W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	封装: -	库存17,175	-	40V	11.1A (Ta), 42A (Tc)	15mOhm @ 20A, 10V	4V @ 250µA	10.6nC @ 10V	805pF @ 20V	2.6W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
DMT10H017LPD-13	Diodes Incorporated	MOSFET 2N-CH 100V 54.7A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc) Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V Power - Max: 2.2W (Ta), 78W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	封装: -	库存7,425	-	100V	54.7A (Tc)	17.4mOhm @ 17A, 10V	3V @ 250µA	28.6nC @ 10V	1986pF @ 50V	2.2W (Ta), 78W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
DMP32D9UDAQ-7B	Diodes Incorporated	MOSFET 2P-CH 30V 0.22A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V Power - Max: 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	封装: -	Request a Quote	-	30V	220mA (Ta)	5Ohm @ 100mA, 4.5V	1V @ 250µA	350nC @ 4.5V	21.8pF @ 15V	360mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X2-DFN0806-6
DMTH4014LPD-13	Diodes Incorporated	MOSFET 2N-CH 40V 10.6A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V Power - Max: 2.41W (Ta), 42.8W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	封装: -	库存2,787	-	40V	10.6A (Ta), 43.6A (Tc)	15mOhm @ 20A, 10V	3V @ 250µA	10.2nC @ 10V	733pF @ 20V	2.41W (Ta), 42.8W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
DMTH6016LPD-13	Diodes Incorporated	MOSFET 2N-CH 60V 9.2A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Power - Max: 2.5W (Ta), 37.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	封装: -	库存15,000	-	60V	9.2A (Ta), 33.2A (Tc)	19mOhm @ 10A, 10V	2.5V @ 250µA	17nC @ 10V	864pF @ 30V	2.5W (Ta), 37.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8

DMN2025UFDB-13

Diodes Incorporated

MOSFET 2N-CH 20V 6A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: -

Request a Quote

-

20V

6A (Ta)

25mOhm @ 4A, 4.5V

1V @ 250µA

12.3nC @ 10V

486pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

DMN5L06VKQ-13

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

Request a Quote

-

50V

280mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

-

50pF @ 25V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMT32M6LDG-13

Diodes Incorporated

MOSFET 2N-CH 30V 21A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V
Power - Max: 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type G)

封装: -

库存8,970

-

30V

21A (Ta), 47A (Tc)

2.5mOhm @ 18A, 10V

2.2V @ 400µA

15.6nC @ 4.5V

2101pF @ 15V

1.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type G)

DMN62D2UDWQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT363 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

Request a Quote

-

60V

340mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

0.8nC @ 4.5V

41pF @ 30V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMT6017LDV-13

Diodes Incorporated

MOSFET 2N-CH 25.3A POWERDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

封装: -

Request a Quote

-

25.3A (Tc)

22mOhm @ 6A, 10V

2.3V @ 250µA

-

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

DMN2053UVTQ-13

Diodes Incorporated

MOSFET 2N-CH 20V 4.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

Request a Quote

-

20V

4.6A (Ta)

35mOhm @ 5A, 4.5V

1V @ 250µA

3.6nC @ 4.5V

369pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN52D0UVTQ-13

Diodes Incorporated

MOSFET BVDSS: 41V~60V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

Request a Quote

-

50V

430mA (Ta)

2Ohm @ 50mA, 5V

1V @ 250µA

1.4nC @ 10V

41pF @ 25V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMC1028UVT-7

Diodes Incorporated

MOSFET N/P-CH 12V 6.1A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

库存10,983

-

12V, 20V

6.1A (Ta), 3.5A (Ta)

25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V

1V @ 250µA

18.5nC @ 8V, 11.5nC @ 8V

787pF @ 6V, 576pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMC1018UPDWQ-13

Diodes Incorporated

MOSFET N/P-CH 12V 20.9A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V, 19nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V, 866pF @ 6V
Power - Max: 2.6W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

封装: -

库存5,472

-

12V, 20V

10A (Ta), 31.3A (Ta), 6.7A (Ta), 20.9A (Tc)

17mOhm @ 11.8A, 4.5V, 38mOhm @ 8.9A, 4.5V

1.5V @ 250µA

30.4nC @ 8V, 19nC @ 8V

1525pF @ 6V, 866pF @ 6V

2.6W (Ta), 25W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

DMT4015LDV-13

Diodes Incorporated

MOSFET 2N-CH 40V 7.8A PWRDI3333

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 21.2A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V
Power - Max: 1.1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

封装: -

Request a Quote

-

40V

7.8A (Ta), 21.2A (Tc)

20mOhm @ 8A, 10V

2.5V @ 250µA

15.7nC @ 10V

808pF @ 30V

1.1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

DMN63D1LVQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 477mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 450mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

Request a Quote

-

60V

477mA (Ta)

2Ohm @ 500mA, 10V

2.5V @ 1mA

1.04nC @ 10V

41pF @ 30V

450mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMC1028UVT-13

Diodes Incorporated

MOSFET N/P-CH 12V 6.1A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V, 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V, 576pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

Request a Quote

-

12V, 20V

6.1A (Ta), 3.5A (Ta)

25mOhm @ 5.2A, 4.5V, 80mOhm @ 3.8A, 4.5V

1V @ 250µA

18.5nC @ 8V, 11.5nC @ 8V

787pF @ 6V, 576pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMC2991UDJ-7

Diodes Incorporated

MOSFET N/P-CH 20V 0.5A SOT963

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V, 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V, 17pF @ 16V
Power - Max: 380mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封装: -

库存29,715

-

20V

500mA (Ta), 360mA (Ta)

990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V

1V @ 250µA

0.35nC @ 4.5V, 0.3nC @ 4.5V

21.5pF @ 15V, 17pF @ 16V

380mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

DMN16M9UCA6-7

Diodes Incorporated

MOSFET 2N-CH X3-DSN2718-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Power - Max: 2.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X3-DSN2718-6

封装: -

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-

1.3V @ 1mA

35.2nC @ 4.5V

2360pF @ 6V

2.4W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X3-DSN2718-6

DMP31D7LV-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

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-

30V

620mA (Ta)

900mOhm @ 420mA, 10V

2.6V @ 250µA

0.8nC @ 10V

19pF @ 15V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMC3025LSDQ-13

Diodes Incorporated

MOSFET N/P-CH 30V 6.5A/4.2A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Power - Max: 1.2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: -

库存30,333

-

30V

6.5A (Ta), 4.2A (Ta)

20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V

2V @ 250µA

4.6nC @ 4.5V, 5.1nC @ 4.5V

501pF @ 15V, 590pF @ 25V

1.2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN63D1LV-13

Diodes Incorporated

MOSFET 2N-CH 60V 0.55A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 0.392nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power - Max: 940mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

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-

60V

550mA (Ta)

2Ohm @ 500mA, 10V

2.5V @ 1mA

0.392nC @ 4.5V

30pF @ 25V

940mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN2710UDWQ-13

Diodes Incorporated

MOSFET 2N-CH 20V 0.8A SOT363

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Power - Max: 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

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-

20V

800mA (Ta)

450mOhm @ 600mA, 4.5V

1V @ 250µA

0.6nC @ 4.5V

42pF @ 16V

360mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMC3730UVT-13

Diodes Incorporated

MOSFET N/P-CH 25V 0.68A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), 460mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.64nC @ 4.5V, 1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V, 63pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

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-

25V

680mA (Ta), 460mA (Ta)

450mOhm @ 500mA, 4.5V, 1.1Ohm @ 500mA, 4.5V

1.1V @ 250µA

1.64nC @ 4.5V, 1.1nC @ 4.5V

50pF @ 10V, 63pF @ 10V

700mW

-55°C ~ 175°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN2014LHAB-13

Diodes Incorporated

MOSFET 2N-CH 20V 9A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
Power - Max: 800mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: U-DFN2030-6 (Type B)

封装: -

库存30,000

-

20V

9A (Ta)

13mOhm @ 4A, 4.5V

1.1V @ 250µA

16nC @ 4.5V

1550pF @ 10V

800mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UFDFN Exposed Pad

U-DFN2030-6 (Type B)

DMP4047SSDQ-13

Diodes Incorporated

MOSFET 2P-CH 40V 5.1A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V
Power - Max: 1.3W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: -

库存7,470

-

40V

5.1A (Ta)

45mOhm @ 4.4A, 10V

3V @ 250µA

21.5nC @ 10V

1154pF @ 20V

1.3W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMP31D7LVQ-7

Diodes Incorporated

MOSFET 2P-CH 30V 0.62A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 15V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存8,220

-

30V

620mA (Ta)

900mOhm @ 420mA, 10V

2.6V @ 250µA

0.8nC @ 10V

19pF @ 15V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMP2040UND-7

Diodes Incorporated

MOSFET 2P-CH 20V 5.3A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 13.6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXB)

封装: -

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-

20V

5.3A (Ta), 13.6A (Tc)

36mOhm @ 8.9A, 4.5V

1.5V @ 250µA

20nC @ 10V

834pF @ 10V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXB)

DMN3732UVT-13

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

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-

30V

1.1A (Ta)

460mOhm @ 200mA, 4.5V

0.95V @ 250µA

0.9nC @ 10V

40.8pF @ 25V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMN2053UVT-13

Diodes Incorporated

MOSFET 2N-CH 20V 4.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

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-

20V

4.6A (Ta)

35mOhm @ 5A, 4.5V

1V @ 250µA

3.6nC @ 4.5V

369pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMTH4011SPD-13

Diodes Incorporated

MOSFET 2N-CH 40V 11.1A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Power - Max: 2.6W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

封装: -

库存17,175

-

40V

11.1A (Ta), 42A (Tc)

15mOhm @ 20A, 10V

4V @ 250µA

10.6nC @ 10V

805pF @ 20V

2.6W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

DMT10H017LPD-13

Diodes Incorporated

MOSFET 2N-CH 100V 54.7A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 54.7A (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
Power - Max: 2.2W (Ta), 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

封装: -

库存7,425

-

100V

54.7A (Tc)

17.4mOhm @ 17A, 10V

3V @ 250µA

28.6nC @ 10V

1986pF @ 50V

2.2W (Ta), 78W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

DMP32D9UDAQ-7B

Diodes Incorporated

MOSFET 2P-CH 30V 0.22A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.8pF @ 15V
Power - Max: 360mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X2-DFN0806-6

封装: -

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-

30V

220mA (Ta)

5Ohm @ 100mA, 4.5V

1V @ 250µA

350nC @ 4.5V

21.8pF @ 15V

360mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X2-DFN0806-6

DMTH4014LPD-13

Diodes Incorporated

MOSFET 2N-CH 40V 10.6A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 43.6A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 733pF @ 20V
Power - Max: 2.41W (Ta), 42.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

封装: -

库存2,787

-

40V

10.6A (Ta), 43.6A (Tc)

15mOhm @ 20A, 10V

3V @ 250µA

10.2nC @ 10V

733pF @ 20V

2.41W (Ta), 42.8W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

DMTH6016LPD-13

Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Power - Max: 2.5W (Ta), 37.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

封装: -

库存15,000

-

60V

9.2A (Ta), 33.2A (Tc)

19mOhm @ 10A, 10V

2.5V @ 250µA

17nC @ 10V

864pF @ 30V

2.5W (Ta), 37.5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8