Name: RQ3E180AJTB1
Brand: Rohm Semiconductor
SKU: RQ3E180AJTB1
Availability: InStock
Rating: 5 (161 reviews)

RQ3E180AJTB1

仅供参考

零件编号	RQ3E180AJTB1
制造商	Rohm Semiconductor
描述	NCH 30V 18A MIDDLE POWER MOSFET:
数据表
封装	-
ECAD
库存	8,832 piece(s)
单价	Request a Quote
交货时间	待确认
预计送达时间	七月 5 - 七月 10 (选择速递服务)
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RQ3E180AJTB1参数

制造商	Rohm Semiconductor
类别	分立半导体产品 - 晶体管 - FET，MOSFET - 单
封装	-
ECAD
系列	-
FET类型	N-Channel
技术	MOSFET (Metal Oxide)
漏极到源极电压（Vdss）	30 V
电流 - 连续漏极（Id）@ 25°C	18A (Ta), 30A (Tc)
驱动电压（Max Rds On，Min Rds On）	2.5V, 4.5V
Vgs（th）（Max）@Id	1.5V @ 11mA
栅极电荷（Qg）（最大值）@Vgs	39 nC @ 4.5 V
输入电容（Ciss）（最大值）@ Vds	4290 pF @ 15 V
Vgs（最大）	±12V
FET功能	-
功耗（最大值）	2W (Ta), 30W (Tc)
Rds On（Max）@ Id，Vgs	4.5mOhm @ 18A, 4.5V
工作温度	150°C (TJ)
安装类型	Surface Mount
供应商设备包	8-HSMT (3.2x3)
包/箱	8-PowerVDFN

RQ3E180AJTB1 Packaging

RQ3E180AJTB1 FAQ

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RQ3E180AJTB1.

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