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NTLJS3A18PZTWG

NTLJS3A18PZTWG

NTLJS3A18PZTWG

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零件编号 NTLJS3A18PZTWG
制造商 ON Semiconductor
描述 MOSFET P-CH 20V 8.4A WDFN6
数据表

NTLJS3A18PZTWG 数据表

封装 6-WDFN Exposed Pad
ECAD
库存 2,416 piece(s)
单价 Request a Quote
交货时间 待确认
预计送达时间 十一月 18 - 十一月 23 (选择速递服务)
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NTLJS3A18PZTWG参数

制造商ON Semiconductor
类别分立半导体产品 - 晶体管 - FET,MOSFET - 单
封装6-WDFN Exposed Pad
ECAD
系列-
FET类型P-Channel
技术MOSFET (Metal Oxide)
漏极到源极电压(Vdss)20V
电流 - 连续漏极(Id)@ 25°C5A (Ta)
驱动电压(Max Rds On,Min Rds On)1.5V, 4.5V
Vgs(th)(Max)@Id1V @ 250µA
栅极电荷(Qg)(最大值)@Vgs28nC @ 4.5V
输入电容(Ciss)(最大值)@ Vds2240pF @ 15V
Vgs(最大)±8V
FET功能-
功耗(最大值)700mW (Ta)
Rds On(Max)@ Id,Vgs18 mOhm @ 7A, 4.5V
工作温度-55°C ~ 150°C (TJ)
安装类型Surface Mount
供应商设备包6-WDFN (2x2)
包/箱6-WDFN Exposed Pad

NTLJS3A18PZTWG数据表

NTLJS3A18PZTWG Packaging

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NTLJS3A18PZTWG FAQ

  • 1. How to order NTLJS3A18PZTWG on Heisener?
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  • 2. How does Heisener guarantee that NTLJS3A18PZTWG is from the original manufacturer or authorized agents?
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OEM/CM Immediate delivery

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Small Signal Field-Effect Transistor, P-Channel, MOSFET

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