HM0068ANL

Pulse Electronics Network

MDL SIN 100D 1:1 SMT

• Transformer Type: -
• Inductance: -
• E.T.: -
• Turns Ratio - Primary:Secondary: -
• Mounting Type: Surface Mount
• Size / Dimension: 0.500" L x 0.347" W (12.70mm x 8.81mm)
• Height - Seated (Max): 0.082" (2.08mm)
• Operating Temperature: -40°C ~ 105°C

封装: -

TX1475NL

Pulse Electronics Network

XFRMR OCTAL 1:2/1:1 1.2MH SMD

• Transformer Type: T1/E1 (Octal)
• Inductance: 1.2mH
• E.T.: -
• Turns Ratio - Primary:Secondary: 1:2, 1:1
• Mounting Type: Surface Mount
• Size / Dimension: 1.000" L x 0.310" W (25.40mm x 7.87mm)
• Height - Seated (Max): 0.295" (7.49mm)
• Operating Temperature: -40°C ~ 85°C

封装: -

PE-64934NL

Pulse Electronics Network

XFRMR T1/CEPT/ISDN-PRI 1:1

• Transformer Type: T1/E1 (Single)
• Inductance: 1.2mH
• E.T.: -
• Turns Ratio - Primary:Secondary: 1CT:1
• Mounting Type: Through Hole
• Size / Dimension: 0.500" L x 0.350" W (12.70mm x 8.89mm)
• Height - Seated (Max): 0.250" (6.35mm)
• Operating Temperature: 0°C ~ 70°C

封装: -

S558-5999-Q3-F

Bel Fuse Inc.

MODULE XFRMR LAN GIGABIT 48P SMD

• Transformer Type: LAN
• Inductance: 350µH
• E.T.: -
• Turns Ratio - Primary:Secondary: 1CT:1CT Transmitter, 1CT:1CT Receiver
• Mounting Type: Surface Mount
• Size / Dimension: 1.095" L x 0.480" W (27.81mm x 12.19mm)
• Height - Seated (Max): 0.295" (7.49mm)
• Operating Temperature: 0°C ~ 70°C

封装: -

HX5401NL

Pulse Electronics Network

XFRMR MODL 4PORT POE GIGABIT

• Transformer Type: Isolation and Data Interface (Encapsulated)
• Inductance: 350µH
• E.T.: -
• Turns Ratio - Primary:Secondary: 1CT:1CT Transmitter, 1CT:1CT Receiver
• Mounting Type: Surface Mount
• Size / Dimension: 1.120" L x 0.680" W (28.45mm x 17.27mm)
• Height - Seated (Max): 0.438" (11.12mm)
• Operating Temperature: -40°C ~ 85°C

封装: -

HX5120NL

Pulse Electronics Network

MODULE XFORMR GIGABIT EXT SMD

• Transformer Type: -
• Inductance: -
• E.T.: -
• Turns Ratio - Primary:Secondary: -
• Mounting Type: -
• Size / Dimension: 0.650" L x 0.360" W (16.51mm x 9.14mm)
• Height - Seated (Max): 0.082" (2.08mm)
• Operating Temperature: -40°C ~ 85°C

封装: -

HX5008NL

Pulse Electronics Network

MODULE SINGLE GIGABIT LAN 24SOIC

• Transformer Type: Isolation and Data Interface (Encapsulated)
• Inductance: -
• E.T.: -
• Turns Ratio - Primary:Secondary: 1:1
• Mounting Type: Surface Mount
• Size / Dimension: 0.518" L x 0.595" W (13.16mm x 15.11mm)
• Height - Seated (Max): 0.251" (6.37mm)
• Operating Temperature: -40°C ~ 85°C

封装: -

H5120NL

Pulse Electronics Network

MODULE XFORMR SNGL GIGABIT SMD

• Transformer Type: -
• Inductance: -
• E.T.: -
• Turns Ratio - Primary:Secondary: 1CT:1CT
• Mounting Type: Surface Mount
• Size / Dimension: 0.650" L x 0.365" W (16.51mm x 9.27mm)
• Height - Seated (Max): 0.082" (2.08mm)
• Operating Temperature: 0°C ~ 70°C

封装: -

HX5008NLT

Pulse Electronics Network

TRANSFORMER MODULE GIGABIT 1PORT

• Transformer Type: Isolation and Data Interface (Encapsulated)
• Inductance: -
• E.T.: -
• Turns Ratio - Primary:Secondary: 1:1
• Mounting Type: Surface Mount
• Size / Dimension: 0.518" L x 0.595" W (13.16mm x 15.11mm)
• Height - Seated (Max): 0.251" (6.37mm)
• Operating Temperature: -40°C ~ 85°C

封装: -

HX1188NL

Pulse Electronics Network

MODULE XFRMR SGL ETHR LAN 16SOIC

• Transformer Type: Isolation and Data Interface (Encapsulated)
• Inductance: -
• E.T.: -
• Turns Ratio - Primary:Secondary: 1:1 Transmitter, 1:1 Receiver
• Mounting Type: Surface Mount
• Size / Dimension: 0.500" L x 0.280" W (12.70mm x 7.11mm)
• Height - Seated (Max): 0.245" (6.22mm)
• Operating Temperature: -40°C ~ 85°C

封装: -

749022011

Wurth Electronics Inc.

TRANSFORMER LAN 10/100/1000 POE

• Transformer Type: LAN 10/100/1000 Base-T, POE
• Inductance: 350µH
• E.T.: -
• Turns Ratio - Primary:Secondary: 1:1
• Mounting Type: Surface Mount
• Size / Dimension: 0.720" L x 0.480" W (18.30mm x 12.20mm)
• Height - Seated (Max): 0.250" (6.35mm)
• Operating Temperature: -40°C ~ 85°C

封装: -

HX2019NLT

Pulse Electronics Network

XFRMR MAGNT MOD 1PORT POE 10/100

• Transformer Type: Isolation and Data Interface (Encapsulated)
• Inductance: -
• E.T.: -
• Turns Ratio - Primary:Secondary: 1:1 Transmitter, 1:1 Receiver
• Mounting Type: Surface Mount
• Size / Dimension: 0.500" L x 0.280" W (12.70mm x 7.11mm)
• Height - Seated (Max): 0.245" (6.22mm)
• Operating Temperature: -40°C ~ 85°C

封装: -

HX1188NLT

Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

• Transformer Type: Isolation and Data Interface (Encapsulated)
• Inductance: -
• E.T.: -
• Turns Ratio - Primary:Secondary: 1:1 Transmitter, 1:1 Receiver
• Mounting Type: Surface Mount
• Size / Dimension: 0.500" L x 0.280" W (12.70mm x 7.11mm)
• Height - Seated (Max): 0.245" (6.22mm)
• Operating Temperature: -40°C ~ 85°C

封装: -

HX1188FNLT

Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

• Transformer Type: Isolation and Data Interface (Encapsulated)
• Inductance: -
• E.T.: -
• Turns Ratio - Primary:Secondary: 1:1 Transmitter, 1:1 Receiver
• Mounting Type: Surface Mount
• Size / Dimension: 0.500" L x 0.358" W (12.70mm x 9.09mm)
• Height - Seated (Max): 0.241" (6.12mm)
• Operating Temperature: -40°C ~ 85°C

封装: -

H1102NLT

Pulse Electronics Network

XFRMR MAGNETIC 1PORT 1:1 10/100

• Transformer Type: Isolation and Data Interface (Encapsulated)
• Inductance: -
• E.T.: -
• Turns Ratio - Primary:Secondary: 1:1 Transmitter, 1:1 Receiver
• Mounting Type: Surface Mount
• Size / Dimension: 0.500" L x 0.280" W (12.70mm x 7.11mm)
• Height - Seated (Max): 0.245" (6.22mm)
• Operating Temperature: 0°C ~ 70°C

封装: -

ALT4532M-171-T001

TDK Corporation

XFRMR LAN 1CT:1CT 170UH

• Transformer Type: LAN
• Inductance: 170µH
• E.T.: -
• Turns Ratio - Primary:Secondary: 1CT:1CT
• Mounting Type: Surface Mount
• Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
• Height - Seated (Max): 0.087" (2.20mm)
• Operating Temperature: -40°C ~ 85°C

封装: -

BCV62C,215

Nexperia USA Inc.

TRANS PNP 30V 100MA DUAL SOT143B

• Transistor Type: 2 PNP (Dual) Current Mirror
• Applications: Current Mirror
• Voltage - Rated: 30V
• Current Rating: 100mA
• Mounting Type: Surface Mount
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: SOT-143B

封装: TO-253-4, TO-253AA

J201

Fairchild/ON Semiconductor

JFET N-CH 40V 0.625W TO92

• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): 40V
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 20V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
• Input Capacitance (Ciss) (Max) @ Vds: -
• Resistance - RDS(On): -
• Power - Max: 625mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

J111

Fairchild/ON Semiconductor

JFET N-CH 35V 625MW TO92

• FET Type: N-Channel
• Voltage - Breakdown (V(BR)GSS): 35V
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: 3V @ 1µA
• Input Capacitance (Ciss) (Max) @ Vds: -
• Resistance - RDS(On): 30 Ohm
• Power - Max: 625mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

IXGH10N300

IXYS

IGBT 3000V 18A 100W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3000V
• Current - Collector (Ic) (Max): 18A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 5.2V @ 15V, 30A
• Power - Max: 100W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

封装: TO-247-3

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 200A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
• Power - Max: 660W
• Switching Energy: 2.4mJ (on), 5.5mJ (off)
• Input Type: Standard
• Gate Charge: 350nC
• Td (on/off) @ 25°C: 60ns/200ns
• Test Condition: 480V, 100A, 2.4 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

封装: TO-247-3

IRG4BC20KDSTRRP

Infineon Technologies

IGBT 600V 16A 60W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 32A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 9A
• Power - Max: 60W
• Switching Energy: 340µJ (on), 300µJ (off)
• Input Type: Standard
• Gate Charge: 34nC
• Td (on/off) @ 25°C: 54ns/180ns
• Test Condition: 480V, 9A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXBT12N300HV

IXYS

IGBT 3000V 30A 160W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3000V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
• Power - Max: 160W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 62nC
• Td (on/off) @ 25°C: 64ns/180ns
• Test Condition: 1250V, 12A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 1.4µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

FGH40N60SMD

Fairchild/ON Semiconductor

IGBT 600V 80A 349W TO-247-3

• IGBT Type: Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
• Power - Max: 349W
• Switching Energy: 870µJ (on), 260µJ (off)
• Input Type: Standard
• Gate Charge: 119nC
• Td (on/off) @ 25°C: 12ns/92ns
• Test Condition: 400V, 40A, 6 Ohm, 15V
• Reverse Recovery Time (trr): 36ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封装: TO-247-3

IRG7PH42UDPBF

Infineon Technologies

IGBT 1200V 85A 320W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 85A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 320W
• Switching Energy: 2.11mJ (on), 1.18mJ (off)
• Input Type: Standard
• Gate Charge: 157nC
• Td (on/off) @ 25°C: 25ns/229ns
• Test Condition: 600V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 153ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封装: TO-247-3

IXGA20N120A3

IXYS

IGBT 1200V 40A 180W TO263

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 180W
• Switching Energy: 2.85mJ (on), 6.47mJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 16ns/290ns
• Test Condition: 960V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (IXGA)

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FMG2G400US60

Fairchild/ON Semiconductor

IGBT MOLDING 600V 400A 7PM-IA

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 400A
• Power - Max: 1136W
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 400A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 7PM-IA
• Supplier Device Package: 7PM-IA

封装: 7PM-IA

FF1200R12KE3

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE VCES 1200V 1200A

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

FP25R12KE3BOSA1

Infineon Technologies Industrial Power and Controls Americas

IGBT MODULE 1200V 25A

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 40A
• Power - Max: 155W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 25A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 1.8nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: Module

IRFR7440PBF

Infineon Technologies

MOSFET N CH 40V 90A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.9V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 134nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4610pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63